TY - JOUR
T1 - High-temperature characteristics of Ag and Ni/diamond Schottky diodes
AU - Ueda, K.
AU - Kawamoto, K.
AU - Soumiya, T.
AU - Asano, H.
N1 - Funding Information:
This work was supported in part by Grants-in-Aid for Science Research (No. 20360005 , 22760250 , 24560372 ) from the Ministry of Education, Culture, Sports, Science and Technology, Japan , Research Foundation for Materials Science , the Scholar Project of Toyota Physical and Chemical Research Institute , and the Tatematsu Foundation .
PY - 2013
Y1 - 2013
N2 - The high-temperature characteristics of diamond Schottky diodes fabricated using Ag or Ni on in-situ boron-doped diamond were examined. Up to 600 C, Ag Schottky diodes exhibited a high rectification ratio of the order of 10 4. Even at ∼ 750 C, their rectification ratio was about 10, indicating that diamond field effect transistors with Ag Schottky diodes can operate at this temperature. In contrast, Ni Schottky diodes did not show clear rectification above 600 C. An analysis of the I-V curves indicated that the Ag Schottky diodes have a higher rectification ratio than the Ni Schottky diodes at high temperatures due to their higher barrier heights (φB = ∼ 2.0 and ∼ 0.7 eV for Ag and Ni, respectively).
AB - The high-temperature characteristics of diamond Schottky diodes fabricated using Ag or Ni on in-situ boron-doped diamond were examined. Up to 600 C, Ag Schottky diodes exhibited a high rectification ratio of the order of 10 4. Even at ∼ 750 C, their rectification ratio was about 10, indicating that diamond field effect transistors with Ag Schottky diodes can operate at this temperature. In contrast, Ni Schottky diodes did not show clear rectification above 600 C. An analysis of the I-V curves indicated that the Ag Schottky diodes have a higher rectification ratio than the Ni Schottky diodes at high temperatures due to their higher barrier heights (φB = ∼ 2.0 and ∼ 0.7 eV for Ag and Ni, respectively).
KW - Diamond
KW - High-temperature characteristics
KW - Schottky diodes
KW - Semiconductors
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U2 - 10.1016/j.diamond.2013.06.007
DO - 10.1016/j.diamond.2013.06.007
M3 - Article
AN - SCOPUS:84880081928
SN - 0925-9635
VL - 38
SP - 41
EP - 44
JO - Diamond and Related Materials
JF - Diamond and Related Materials
ER -