High-temperature characteristics of Ag and Ni/diamond Schottky diodes

K. Ueda*, K. Kawamoto, T. Soumiya, H. Asano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

The high-temperature characteristics of diamond Schottky diodes fabricated using Ag or Ni on in-situ boron-doped diamond were examined. Up to 600 C, Ag Schottky diodes exhibited a high rectification ratio of the order of 10 4. Even at ∼ 750 C, their rectification ratio was about 10, indicating that diamond field effect transistors with Ag Schottky diodes can operate at this temperature. In contrast, Ni Schottky diodes did not show clear rectification above 600 C. An analysis of the I-V curves indicated that the Ag Schottky diodes have a higher rectification ratio than the Ni Schottky diodes at high temperatures due to their higher barrier heights (φB = ∼ 2.0 and ∼ 0.7 eV for Ag and Ni, respectively).

Original languageEnglish
Pages (from-to)41-44
Number of pages4
JournalDiamond and Related Materials
Volume38
DOIs
Publication statusPublished - 2013
Externally publishedYes

Keywords

  • Diamond
  • High-temperature characteristics
  • Schottky diodes
  • Semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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