High-temperature characteristics of AlxGa1-xN-based vertical conducting diodes

Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigated the high-temperature characteristics for Al xGa1-xN-based (x = 0-0.57) vertical conducting diodes. In the forward current-voltage (I-V) characteristics, the offset voltage decreases with temperature because of the reduction of the built-in potential due to the decrease in the bandgap energy with temperature. In spite of an increase in SiC substrate resistance with temperature because of a decrease in the electron mobility, the on-state resistance of the diode with Al0.22Ga 0.78N is as low as 1.45mΩcm2 even at 250°C because of the reduced resistance of the p-InGaN layer due to an increase in the hole concentration. In the reverse I-V characteristics, the breakdown voltage increases with increasing Al composition, x, of AlxGa1-xN layer because the higher the Al composition of the AlxGa 1-xN layer is, the higher the critical electric field becomes. Although the reverse leakage current of AlxGa1-xN-based diodes increases with increasing temperature, the breakdown voltage at elevated temperatures is similar to that at room temperature. These features indicate the feasibility of AlxGa1-xN-based diodes for high-temperature operation.

Original languageEnglish
Pages (from-to)2838-2840
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25
Externally publishedYes

Fingerprint

Diodes
diodes
conduction
electrical faults
Temperature
temperature
Electric breakdown
electric potential
electron mobility
High temperature operations
Hole concentration
Electron mobility
leakage
Electric potential
Chemical analysis
Leakage currents
electric fields
Energy gap
room temperature
Electric fields

Keywords

  • AlGaN
  • Breakdown voltage
  • High-temperature
  • MOVPE
  • On-state resistance

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

High-temperature characteristics of AlxGa1-xN-based vertical conducting diodes. / Nishikawa, Atsushi; Kumakura, Kazuhide; Kasu, Makoto; Makimoto, Toshiki.

In: Japanese Journal of Applied Physics, Vol. 47, No. 4 PART 2, 25.04.2008, p. 2838-2840.

Research output: Contribution to journalArticle

Nishikawa, Atsushi ; Kumakura, Kazuhide ; Kasu, Makoto ; Makimoto, Toshiki. / High-temperature characteristics of AlxGa1-xN-based vertical conducting diodes. In: Japanese Journal of Applied Physics. 2008 ; Vol. 47, No. 4 PART 2. pp. 2838-2840.
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