High-temperature characteristics of AlxGa1-xN-based vertical conducting diodes

Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigated the high-temperature characteristics for Al xGa1-xN-based (x = 0-0.57) vertical conducting diodes. In the forward current-voltage (I-V) characteristics, the offset voltage decreases with temperature because of the reduction of the built-in potential due to the decrease in the bandgap energy with temperature. In spite of an increase in SiC substrate resistance with temperature because of a decrease in the electron mobility, the on-state resistance of the diode with Al0.22Ga 0.78N is as low as 1.45mΩcm2 even at 250°C because of the reduced resistance of the p-InGaN layer due to an increase in the hole concentration. In the reverse I-V characteristics, the breakdown voltage increases with increasing Al composition, x, of AlxGa1-xN layer because the higher the Al composition of the AlxGa 1-xN layer is, the higher the critical electric field becomes. Although the reverse leakage current of AlxGa1-xN-based diodes increases with increasing temperature, the breakdown voltage at elevated temperatures is similar to that at room temperature. These features indicate the feasibility of AlxGa1-xN-based diodes for high-temperature operation.

Original languageEnglish
Pages (from-to)2838-2840
Number of pages3
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25
Externally publishedYes

Keywords

  • AlGaN
  • Breakdown voltage
  • High-temperature
  • MOVPE
  • On-state resistance

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'High-temperature characteristics of Al<sub>x</sub>Ga<sub>1-x</sub>N-based vertical conducting diodes'. Together they form a unique fingerprint.

  • Cite this