The device performance of AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) with a very thin AlGaN barrier and a heavily doped GaN channel for high 2DEG density has been investigated at elevated temperatures up to 250°C. The devices exhibited ultra-low gate current leakages under the reverse gate bias with very reasonable transconductance characteristics at both RT and high temperatures. MIS-HFETs with doped channel showed much higher saturation drain current and weaker current collapse than the conventional devices at RT and high temperatures.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2006 Jul 31|
|Event||6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany|
Duration: 2005 Aug 28 → 2005 Sep 2
ASJC Scopus subject areas
- Condensed Matter Physics