High temperature characteristics of doped channel AlGaN/GaN MIS-HFETs with thin AlGaN barrier layer

C. X. Wang, N. Maeda, M. Hiroki, Y. Yokoyama, T. Makimoto, T. Kobayashi, T. Enoki

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

The device performance of AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) with a very thin AlGaN barrier and a heavily doped GaN channel for high 2DEG density has been investigated at elevated temperatures up to 250°C. The devices exhibited ultra-low gate current leakages under the reverse gate bias with very reasonable transconductance characteristics at both RT and high temperatures. MIS-HFETs with doped channel showed much higher saturation drain current and weaker current collapse than the conventional devices at RT and high temperatures.

Original languageEnglish
Pages (from-to)2317-2320
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006 Jul 31
Externally publishedYes
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 2005 Aug 282005 Sep 2

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'High temperature characteristics of doped channel AlGaN/GaN MIS-HFETs with thin AlGaN barrier layer'. Together they form a unique fingerprint.

  • Cite this