High temperature characteristics of doped channel AlGaN/GaN MIS-HFETs with thin AlGaN barrier layer

C. X. Wang, N. Maeda, M. Hiroki, Y. Yokoyama, Toshiki Makimoto, T. Kobayashi, T. Enoki

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The device performance of AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) with a very thin AlGaN barrier and a heavily doped GaN channel for high 2DEG density has been investigated at elevated temperatures up to 250°C. The devices exhibited ultra-low gate current leakages under the reverse gate bias with very reasonable transconductance characteristics at both RT and high temperatures. MIS-HFETs with doped channel showed much higher saturation drain current and weaker current collapse than the conventional devices at RT and high temperatures.

Original languageEnglish
Pages (from-to)2317-2320
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006
Externally publishedYes

Fingerprint

MIS (semiconductors)
barrier layers
field effect transistors
transconductance
temperature
leakage
saturation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

High temperature characteristics of doped channel AlGaN/GaN MIS-HFETs with thin AlGaN barrier layer. / Wang, C. X.; Maeda, N.; Hiroki, M.; Yokoyama, Y.; Makimoto, Toshiki; Kobayashi, T.; Enoki, T.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 3, 2006, p. 2317-2320.

Research output: Contribution to journalArticle

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AU - Wang, C. X.

AU - Maeda, N.

AU - Hiroki, M.

AU - Yokoyama, Y.

AU - Makimoto, Toshiki

AU - Kobayashi, T.

AU - Enoki, T.

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