High-temperature characteristics up to 590 °c of a pnp AlGaN/GaN heterojunction bipolar transistor

Kazuhide Kumakura, Toshiki Makimoto

Research output: Contribution to journalArticle

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Abstract

We investigated the temperature dependence of the common-emitter I-V characteristics of a pnp AlGaN/GaN heterojunction bipolar transistor (HBT) at temperatures ranging from RT to 590 °C. The HBT operated at 590 °C in air with a current gain of 3. Even at 590 °C, the collector-emitter leakage current was as low as 9 μA at the collector-emitter voltage of 40 V. Although there is no significant degradation of the HBT characteristics only by annealing in air at 400 °C for 2 h, the current gain reduced to 30% of the initial one after the common-emitter operation at 400 °C for 2 h.

Original languageEnglish
Article number103502
JournalApplied Physics Letters
Volume94
Issue number10
DOIs
Publication statusPublished - 2009
Externally publishedYes

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bipolar transistors
heterojunctions
emitters
accumulators
air
leakage
degradation
temperature dependence
annealing
electric potential
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-temperature characteristics up to 590 °c of a pnp AlGaN/GaN heterojunction bipolar transistor. / Kumakura, Kazuhide; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 94, No. 10, 103502, 2009.

Research output: Contribution to journalArticle

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AB - We investigated the temperature dependence of the common-emitter I-V characteristics of a pnp AlGaN/GaN heterojunction bipolar transistor (HBT) at temperatures ranging from RT to 590 °C. The HBT operated at 590 °C in air with a current gain of 3. Even at 590 °C, the collector-emitter leakage current was as low as 9 μA at the collector-emitter voltage of 40 V. Although there is no significant degradation of the HBT characteristics only by annealing in air at 400 °C for 2 h, the current gain reduced to 30% of the initial one after the common-emitter operation at 400 °C for 2 h.

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