High-temperature dielectric materials from atomically-thin perovskites

Minoru Osada, Takayoshi Sasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The search of new electronic materials for high-temperature applications has been a significant challenge in recent years. In automotive industries, for example, cutting-edge technology requires electronic components operable at high temperatures (> 200 °C). The absence of suitable capacitors is one of the major barriers to meet this goal. Here we provide a solution to these issues by using an atomically-thin perovskite nanosheet (Ca2Nb3O10), a twodimensional material derived from the exfoliation of a layered compound. Through in-situ characterizations, we found a robust thermal stability of Ca2Nb3O10) nanosheet even in a monolayer form (~ 2 nm). Furthermore, layer-bylayer assembled nanocapacitors retained both size-free high-ϵr characteristic and high insulation resistance at high temperatures up to 250 °C. The simultaneous improvement of ϵr and thermal stability in high-k nanodielectrics is of critical technological importance for the use of high-temperature capacitors.

Original languageEnglish
Title of host publicationIMAPS/ACerS 12th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2016
PublisherIMAPS-International Microelectronics and Packaging Society
Pages164-168
Number of pages5
Publication statusPublished - 2016
Externally publishedYes
EventIMAPS/ACerS 12th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2016 - Denver, United States
Duration: 2016 Apr 192016 Apr 21

Other

OtherIMAPS/ACerS 12th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2016
CountryUnited States
CityDenver
Period16/4/1916/4/21

Fingerprint

Nanosheets
Thermodynamic stability
Capacitors
High temperature applications
Automotive industry
Perovskite
Temperature
Insulation
Monolayers
perovskite

Keywords

  • High-temperature capacitors
  • Nanodielectrics
  • Oxide nanosheet

ASJC Scopus subject areas

  • Materials Chemistry
  • Hardware and Architecture
  • Ceramics and Composites

Cite this

Osada, M., & Sasaki, T. (2016). High-temperature dielectric materials from atomically-thin perovskites. In IMAPS/ACerS 12th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2016 (pp. 164-168). IMAPS-International Microelectronics and Packaging Society.

High-temperature dielectric materials from atomically-thin perovskites. / Osada, Minoru; Sasaki, Takayoshi.

IMAPS/ACerS 12th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2016. IMAPS-International Microelectronics and Packaging Society, 2016. p. 164-168.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Osada, M & Sasaki, T 2016, High-temperature dielectric materials from atomically-thin perovskites. in IMAPS/ACerS 12th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2016. IMAPS-International Microelectronics and Packaging Society, pp. 164-168, IMAPS/ACerS 12th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2016, Denver, United States, 16/4/19.
Osada M, Sasaki T. High-temperature dielectric materials from atomically-thin perovskites. In IMAPS/ACerS 12th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2016. IMAPS-International Microelectronics and Packaging Society. 2016. p. 164-168
Osada, Minoru ; Sasaki, Takayoshi. / High-temperature dielectric materials from atomically-thin perovskites. IMAPS/ACerS 12th International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2016. IMAPS-International Microelectronics and Packaging Society, 2016. pp. 164-168
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