High-temperature dielectric responses in all-nanosheet capacitors

Muhammad Shuaib Khan, Minoru Osada, Hyung Jun Kim, Yasuo Ebina, Wataru Sugimoto, Takayoshi Sasaki

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    Abstract

    We have investigated high-temperature dielectric responses of layer-by-layer assembled nanosheet capacitors. All-nanosheet capacitors are fabricated by stacking metallic Ru0.95O2 as electrodes and dielectric Ca2Nb3O10 nanosheets as insulators. Through in situ characterizations, we find that all-nanosheet capacitors exhibit a size-free high-k dielectric response (>155) and a moderate insulation resistance (>1 ' 10%5A/cm2) at high temperatures up to 200 °C. The concomitant presence of high ϵr, low leakage profile, and thermal stability in high-k nanocapacitors is critically important for application in high-temperature electronics.

    Original languageEnglish
    Article number06GH09
    JournalJapanese Journal of Applied Physics
    Volume56
    Issue number6
    DOIs
    Publication statusPublished - 2017 Jun 1

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    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Khan, M. S., Osada, M., Kim, H. J., Ebina, Y., Sugimoto, W., & Sasaki, T. (2017). High-temperature dielectric responses in all-nanosheet capacitors. Japanese Journal of Applied Physics, 56(6), [06GH09]. https://doi.org/10.7567/JJAP.56.06GH09