High temperature heat contents of III-V semiconductor systems

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

As part of calorimetric studies on metals and alloys at high temperature, heat contents of the III-V compounds of AlN, GaN, AlP, GaP, InP, AlAs, GaAs, InAs, AlSb, GaSb and InSb were measured over the temperature range 650 to 1550K using a drop calorimeter. The heat content and the heat capacity equations for the solid compounds were derived by the use of the Shomate function. Heat contents of the Ga-As, In-As, Ga-P and In-P binary alloys were also measured to derive the thermodynamic quantities of these liquid alloys by the use of a therniodynamic analysis method, and the vapour pressure-temperature-composition diagrams were constructed.

Original languageEnglish
Pages (from-to)1-12
Number of pages12
JournalThermochimica Acta
Volume163
Issue numberC
DOIs
Publication statusPublished - 1990 Jun 29
Externally publishedYes

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Enthalpy
enthalpy
drop calorimeters
liquid alloys
Binary alloys
binary alloys
Calorimeters
Vapor pressure
Temperature
vapor pressure
Specific heat
Metals
diagrams
specific heat
Thermodynamics
thermodynamics
temperature
Liquids
Chemical analysis
metals

ASJC Scopus subject areas

  • Chemistry (miscellaneous)
  • Physical and Theoretical Chemistry

Cite this

High temperature heat contents of III-V semiconductor systems. / Itagaki, K.; Yamaguchi, Katsunori.

In: Thermochimica Acta, Vol. 163, No. C, 29.06.1990, p. 1-12.

Research output: Contribution to journalArticle

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