High Temperature Performance of Enhanced Endurance Hydrogen Terminated Transparent Polycrystalline Diamond FET

Shaili Falina, Hiroshi Kawarada, Asrulnizam Abd Manaf, Mohd Syamsul

Research output: Contribution to journalArticlepeer-review

Abstract

This article reports on the high voltage operations and high temperature operations of the transparent polycrystalline diamond field-effect transistor (TPD-FET). The devices were fabricated with a wide range of wide gate-drain lengths (LGD) and a thick Al2O3 passivation layer of 400 nm. Voltage breakdowns of more than 1000 V have been observed in high voltage measurements. The temperature dependence and performance of the devices at RT to 673 K were also shown. As the temperature was varied, the maximum drain currents (ID max) for different LGD devices increased significantly from 33.8 mA/mm – 72.8 mA/mm to 86.0 mA/mm - 116.4 mA/mm in terms of absolute values. The findings demonstrate the advantages and potential of diamond-based devices in high temperature conditions.

Original languageEnglish
Pages (from-to)1
Number of pages1
JournalIEEE Electron Device Letters
DOIs
Publication statusAccepted/In press - 2022

Keywords

  • Diamond
  • Diamond
  • Electric breakdown
  • FETs
  • high temperature
  • high voltage
  • High-voltage techniques
  • Temperature
  • Temperature measurement
  • Two dimensional hole gas
  • two-dimensional hole gas
  • Voltage measurement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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