Abstract
The improvement of interconnection technology is becoming a top priority for the operation of high power devices such as SiC at higher temperatures. We proposed a interconnection method using Nickel Nano-particles direct bonding to form bonds between the chip electrodes and substrates. SiC devices assembled with the Ni bonding interconnection were confirmed to be operated successfully in a high temperature environment over 300 °C.
Original language | English |
---|---|
Title of host publication | International Symposium on Semiconductor Manufacturing, ISSM 2016 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781509045112 |
DOIs | |
Publication status | Published - 2017 May 26 |
Event | 24th International Symposium on Semiconductor Manufacturing, ISSM 2016 - Tokyo, Japan Duration: 2016 Dec 12 → 2016 Dec 13 |
Other
Other | 24th International Symposium on Semiconductor Manufacturing, ISSM 2016 |
---|---|
Country | Japan |
City | Tokyo |
Period | 16/12/12 → 16/12/13 |
ASJC Scopus subject areas
- Engineering(all)