High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging

Tomonori Iizuka, Yasunori Tanaka, Kazuhito Kamei, Masakazu Inagaki, Norihiro Murakawa, Kohei Tatsumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The improvement of interconnection technology is becoming a top priority for the operation of high power devices such as SiC at higher temperatures. We proposed a interconnection method using Nickel Nano-particles direct bonding to form bonds between the chip electrodes and substrates. SiC devices assembled with the Ni bonding interconnection were confirmed to be operated successfully in a high temperature environment over 300 °C.

Original languageEnglish
Title of host publicationInternational Symposium on Semiconductor Manufacturing, ISSM 2016 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509045112
DOIs
Publication statusPublished - 2017 May 26
Event24th International Symposium on Semiconductor Manufacturing, ISSM 2016 - Tokyo, Japan
Duration: 2016 Dec 122016 Dec 13

Other

Other24th International Symposium on Semiconductor Manufacturing, ISSM 2016
CountryJapan
CityTokyo
Period16/12/1216/12/13

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Iizuka, T., Tanaka, Y., Kamei, K., Inagaki, M., Murakawa, N., & Tatsumi, K. (2017). High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging. In International Symposium on Semiconductor Manufacturing, ISSM 2016 - Proceedings [7934521] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSM.2016.7934521