Abstract
The improvement of interconnection technology is becoming a top priority for the operation of high power devices such as SiC at higher temperatures. We proposed a interconnection method using Nickel Nano-particles direct bonding to form bonds between the chip electrodes and substrates. SiC devices assembled with the Ni bonding interconnection were confirmed to be operated successfully in a high temperature environment over 300 °C.
| Original language | English |
|---|---|
| Title of host publication | International Symposium on Semiconductor Manufacturing, ISSM 2016 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781509045112 |
| DOIs | |
| Publication status | Published - 2017 May 26 |
| Event | 24th International Symposium on Semiconductor Manufacturing, ISSM 2016 - Tokyo, Japan Duration: 2016 Dec 12 → 2016 Dec 13 |
Other
| Other | 24th International Symposium on Semiconductor Manufacturing, ISSM 2016 |
|---|---|
| Country | Japan |
| City | Tokyo |
| Period | 16/12/12 → 16/12/13 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging. / Iizuka, Tomonori; Tanaka, Yasunori; Kamei, Kazuhito; Inagaki, Masakazu; Murakawa, Norihiro; Tatsumi, Kohei.
International Symposium on Semiconductor Manufacturing, ISSM 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. 7934521.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging
AU - Iizuka, Tomonori
AU - Tanaka, Yasunori
AU - Kamei, Kazuhito
AU - Inagaki, Masakazu
AU - Murakawa, Norihiro
AU - Tatsumi, Kohei
PY - 2017/5/26
Y1 - 2017/5/26
N2 - The improvement of interconnection technology is becoming a top priority for the operation of high power devices such as SiC at higher temperatures. We proposed a interconnection method using Nickel Nano-particles direct bonding to form bonds between the chip electrodes and substrates. SiC devices assembled with the Ni bonding interconnection were confirmed to be operated successfully in a high temperature environment over 300 °C.
AB - The improvement of interconnection technology is becoming a top priority for the operation of high power devices such as SiC at higher temperatures. We proposed a interconnection method using Nickel Nano-particles direct bonding to form bonds between the chip electrodes and substrates. SiC devices assembled with the Ni bonding interconnection were confirmed to be operated successfully in a high temperature environment over 300 °C.
UR - http://www.scopus.com/inward/record.url?scp=85021090589&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85021090589&partnerID=8YFLogxK
U2 - 10.1109/ISSM.2016.7934521
DO - 10.1109/ISSM.2016.7934521
M3 - Conference contribution
AN - SCOPUS:85021090589
BT - International Symposium on Semiconductor Manufacturing, ISSM 2016 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -