High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging

Tomonori Iizuka; Yasunori Tanaka; Kazuhito Kamei; Masakazu Inagaki; Norihiro Murakawa; Kohei Tatsumi

doi:10.1109/ISSM.2016.7934521

High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging

Tomonori Iizuka, Yasunori Tanaka, Kazuhito Kamei, Masakazu Inagaki, Norihiro Murakawa, Kohei Tatsumi

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The improvement of interconnection technology is becoming a top priority for the operation of high power devices such as SiC at higher temperatures. We proposed a interconnection method using Nickel Nano-particles direct bonding to form bonds between the chip electrodes and substrates. SiC devices assembled with the Ni bonding interconnection were confirmed to be operated successfully in a high temperature environment over 300 °C.

Original language	English
Title of host publication	International Symposium on Semiconductor Manufacturing, ISSM 2016 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509045112
DOIs	https://doi.org/10.1109/ISSM.2016.7934521
Publication status	Published - 2017 May 26
Event	24th International Symposium on Semiconductor Manufacturing, ISSM 2016 - Tokyo, Japan Duration: 2016 Dec 12 → 2016 Dec 13

Other

Other	24th International Symposium on Semiconductor Manufacturing, ISSM 2016
Country	Japan
City	Tokyo
Period	16/12/12 → 16/12/13

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/ISSM.2016.7934521

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Iizuka, T., Tanaka, Y., Kamei, K., Inagaki, M., Murakawa, N., & Tatsumi, K. (2017). High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging. In International Symposium on Semiconductor Manufacturing, ISSM 2016 - Proceedings [7934521] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSM.2016.7934521

High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging. / Iizuka, Tomonori; Tanaka, Yasunori; Kamei, Kazuhito; Inagaki, Masakazu; Murakawa, Norihiro; Tatsumi, Kohei.

International Symposium on Semiconductor Manufacturing, ISSM 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. 7934521.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Iizuka, T, Tanaka, Y, Kamei, K, Inagaki, M, Murakawa, N & Tatsumi, K 2017, High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging. in International Symposium on Semiconductor Manufacturing, ISSM 2016 - Proceedings., 7934521, Institute of Electrical and Electronics Engineers Inc., 24th International Symposium on Semiconductor Manufacturing, ISSM 2016, Tokyo, Japan, 16/12/12. https://doi.org/10.1109/ISSM.2016.7934521

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