@article{34a8119e32844068bb1ad50cfb9722a2,
title = "High-temperature resistant interconnection using Ni nanoparticles and Al microparticles paste sintered in an atmosphere",
abstract = "Next-generation power devices using wide bandgap semiconductors, such as SiC, are expected to operate at higher temperatures than conventional Si power devices, and their operating temperatures are expected to exceed 250 °C. We developed a novel high-temperature resistant interconnection technology for die-bonding of SiC power devices using Ni nanoparticles and Al microparticles composite paste. The bond strength of the Al-metallized Si chip to Ni-plated direct bonded copper substrate was evaluated using shear tests. The initial shear strength of samples from pressureless sintering at 350 °C for 15 min in the air exceeded 30 MPa. Furthermore, no significant degradation was observed in a high-temperature storage test at 250 °C for 1000 h.",
keywords = "die bonding, interconnection, nickel nanoparticle, power device, pressureless sintering, SiC",
author = "Keiko Koshiba and Tomonori Iizuka and Kohei Tatsumi",
note = "Funding Information: This work was partly supported by a science and technology research grant from the SUZUKI foundation. Some figures in this paper contain information from the Proceedings of the 32nd Microelectronics Symposium, Keiko Koshiba and Kohei Tatsumi “High Temperature Resistant Interconnection by using Ni Nanoparticles and Al Microparticles Paste Sintered in an Atmosphere” pp. 63–66, which was presented at the 2022 Microelectronics Symposium (MES2022) held by the Japan Institute of Electronics Packaging. Permission to publish the figures has been obtained from the Japan Institute of Electronics Packaging, the copyright holder. Funding Information: This work was partly supported by a science and technology research grant from the SUZUKI foundation. Some figures in this paper contain information from the Proceedings of the 32nd Microelectronics Symposium, Keiko Koshiba and Kohei Tatsumi “High Temperature Resistant Interconnection by using Ni Nanoparticles and Al Microparticles Paste Sintered in an Atmosphere” pp. 63-66, which was presented at the 2022 Microelectronics Symposium (MES2022) held by the Japan Institute of Electronics Packaging. Permission to publish the figures has been obtained from the Japan Institute of Electronics Packaging, the copyright holder. Publisher Copyright: {\textcopyright} 2023 The Japan Society of Applied Physics.",
year = "2023",
month = jan,
day = "1",
doi = "10.35848/1347-4065/acae67",
language = "English",
volume = "62",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "1",
}