High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electro-plating and Ni nano-particles

Yasunori Tanaka, Keito Ota, Haruka Miyano, Yoshiaki Shigenaga, Tomonori Iizuka, Kohei Tatsumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ni Micro-Plating and Ni nano-particle bonding were applied for high temperature resistant chip interconnections of power device packaging. During the evaluation of the reliability of interconnections annealed at up to 300°C, we observed no significant changes in mechanical or electrical properties. Die attach connection was carried out by sintering Ni nano-particles at a low temperature below 300°C. It was also revealed in a bonding experiment using a SiC chip with a deposited Al layer that direct bonding to an Al electrode was possible by using Ni nano-particles. A stress-relaxation structure using a metal film was presented as a new structure for resolving the problem of deteriorating bonding reliability due to thermal stress arising from differences in the coefficient of thermal expansion (CTE) between the chip and the substrate. A SiC device was assembled using the new bonding methods and an operating test was performed to verify normal operation in a high-temperature environment of approximately 300°C and higher.

Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1371-1376
Number of pages6
Volume2015-July
ISBN (Print)9781479986095
DOIs
Publication statusPublished - 2015 Jul 15
Event2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States
Duration: 2015 May 262015 May 29

Other

Other2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
CountryUnited States
CitySan Diego
Period15/5/2615/5/29

Fingerprint

Plating
Packaging
Temperature
Stress relaxation
Thermal stress
Thermal expansion
Electric properties
Sintering
Metals
Mechanical properties
Electrodes
Substrates
Experiments

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Tanaka, Y., Ota, K., Miyano, H., Shigenaga, Y., Iizuka, T., & Tatsumi, K. (2015). High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electro-plating and Ni nano-particles. In Proceedings - Electronic Components and Technology Conference (Vol. 2015-July, pp. 1371-1376). [7159776] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2015.7159776

High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electro-plating and Ni nano-particles. / Tanaka, Yasunori; Ota, Keito; Miyano, Haruka; Shigenaga, Yoshiaki; Iizuka, Tomonori; Tatsumi, Kohei.

Proceedings - Electronic Components and Technology Conference. Vol. 2015-July Institute of Electrical and Electronics Engineers Inc., 2015. p. 1371-1376 7159776.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanaka, Y, Ota, K, Miyano, H, Shigenaga, Y, Iizuka, T & Tatsumi, K 2015, High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electro-plating and Ni nano-particles. in Proceedings - Electronic Components and Technology Conference. vol. 2015-July, 7159776, Institute of Electrical and Electronics Engineers Inc., pp. 1371-1376, 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015, San Diego, United States, 15/5/26. https://doi.org/10.1109/ECTC.2015.7159776
Tanaka Y, Ota K, Miyano H, Shigenaga Y, Iizuka T, Tatsumi K. High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electro-plating and Ni nano-particles. In Proceedings - Electronic Components and Technology Conference. Vol. 2015-July. Institute of Electrical and Electronics Engineers Inc. 2015. p. 1371-1376. 7159776 https://doi.org/10.1109/ECTC.2015.7159776
Tanaka, Yasunori ; Ota, Keito ; Miyano, Haruka ; Shigenaga, Yoshiaki ; Iizuka, Tomonori ; Tatsumi, Kohei. / High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electro-plating and Ni nano-particles. Proceedings - Electronic Components and Technology Conference. Vol. 2015-July Institute of Electrical and Electronics Engineers Inc., 2015. pp. 1371-1376
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