Abstract
Ni Micro-Plating and Ni nano-particle bonding were applied for high temperature resistant chip interconnections of power device packaging. During the evaluation of the reliability of interconnections annealed at up to 300°C, we observed no significant changes in mechanical or electrical properties. Die attach connection was carried out by sintering Ni nano-particles at a low temperature below 300°C. It was also revealed in a bonding experiment using a SiC chip with a deposited Al layer that direct bonding to an Al electrode was possible by using Ni nano-particles. A stress-relaxation structure using a metal film was presented as a new structure for resolving the problem of deteriorating bonding reliability due to thermal stress arising from differences in the coefficient of thermal expansion (CTE) between the chip and the substrate. A SiC device was assembled using the new bonding methods and an operating test was performed to verify normal operation in a high-temperature environment of approximately 300°C and higher.
Original language | English |
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Title of host publication | Proceedings - Electronic Components and Technology Conference |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1371-1376 |
Number of pages | 6 |
Volume | 2015-July |
ISBN (Print) | 9781479986095 |
DOIs | |
Publication status | Published - 2015 Jul 15 |
Event | 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States Duration: 2015 May 26 → 2015 May 29 |
Other
Other | 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 |
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Country | United States |
City | San Diego |
Period | 15/5/26 → 15/5/29 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials