Abstract
Ni Micro-Plating and Ni nano-particle bonding were applied for high temperature resistant chip interconnections of power device packaging. During the evaluation of the reliability of interconnections annealed at up to 300°C, we observed no significant changes in mechanical or electrical properties. Die attach connection was carried out by sintering Ni nano-particles at a low temperature below 300°C. It was also revealed in a bonding experiment using a SiC chip with a deposited Al layer that direct bonding to an Al electrode was possible by using Ni nano-particles. A stress-relaxation structure using a metal film was presented as a new structure for resolving the problem of deteriorating bonding reliability due to thermal stress arising from differences in the coefficient of thermal expansion (CTE) between the chip and the substrate. A SiC device was assembled using the new bonding methods and an operating test was performed to verify normal operation in a high-temperature environment of approximately 300°C and higher.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - Electronic Components and Technology Conference |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1371-1376 |
| Number of pages | 6 |
| Volume | 2015-July |
| ISBN (Print) | 9781479986095 |
| DOIs | |
| Publication status | Published - 2015 Jul 15 |
| Event | 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States Duration: 2015 May 26 → 2015 May 29 |
Other
| Other | 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 |
|---|---|
| Country | United States |
| City | San Diego |
| Period | 15/5/26 → 15/5/29 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electro-plating and Ni nano-particles. / Tanaka, Yasunori; Ota, Keito; Miyano, Haruka; Shigenaga, Yoshiaki; Iizuka, Tomonori; Tatsumi, Kohei.
Proceedings - Electronic Components and Technology Conference. Vol. 2015-July Institute of Electrical and Electronics Engineers Inc., 2015. p. 1371-1376 7159776.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electro-plating and Ni nano-particles
AU - Tanaka, Yasunori
AU - Ota, Keito
AU - Miyano, Haruka
AU - Shigenaga, Yoshiaki
AU - Iizuka, Tomonori
AU - Tatsumi, Kohei
PY - 2015/7/15
Y1 - 2015/7/15
N2 - Ni Micro-Plating and Ni nano-particle bonding were applied for high temperature resistant chip interconnections of power device packaging. During the evaluation of the reliability of interconnections annealed at up to 300°C, we observed no significant changes in mechanical or electrical properties. Die attach connection was carried out by sintering Ni nano-particles at a low temperature below 300°C. It was also revealed in a bonding experiment using a SiC chip with a deposited Al layer that direct bonding to an Al electrode was possible by using Ni nano-particles. A stress-relaxation structure using a metal film was presented as a new structure for resolving the problem of deteriorating bonding reliability due to thermal stress arising from differences in the coefficient of thermal expansion (CTE) between the chip and the substrate. A SiC device was assembled using the new bonding methods and an operating test was performed to verify normal operation in a high-temperature environment of approximately 300°C and higher.
AB - Ni Micro-Plating and Ni nano-particle bonding were applied for high temperature resistant chip interconnections of power device packaging. During the evaluation of the reliability of interconnections annealed at up to 300°C, we observed no significant changes in mechanical or electrical properties. Die attach connection was carried out by sintering Ni nano-particles at a low temperature below 300°C. It was also revealed in a bonding experiment using a SiC chip with a deposited Al layer that direct bonding to an Al electrode was possible by using Ni nano-particles. A stress-relaxation structure using a metal film was presented as a new structure for resolving the problem of deteriorating bonding reliability due to thermal stress arising from differences in the coefficient of thermal expansion (CTE) between the chip and the substrate. A SiC device was assembled using the new bonding methods and an operating test was performed to verify normal operation in a high-temperature environment of approximately 300°C and higher.
UR - http://www.scopus.com/inward/record.url?scp=84942089704&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84942089704&partnerID=8YFLogxK
U2 - 10.1109/ECTC.2015.7159776
DO - 10.1109/ECTC.2015.7159776
M3 - Conference contribution
AN - SCOPUS:84942089704
SN - 9781479986095
VL - 2015-July
SP - 1371
EP - 1376
BT - Proceedings - Electronic Components and Technology Conference
PB - Institute of Electrical and Electronics Engineers Inc.
ER -