High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating

Noriyuki Kato, Akiyoshi Shigenaga, Kohei Tatsumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

High temperature SiC devices require the materials for packaging also capable of working at higher temperature than those for Si devices. SiC devices are expected to help hybrid vehicle power control units (PCUs) produce higher power in a more compact size as SiC can withstand higher voltages and temperatures (above 300°C) than silicon with less power loss. The improvement of interconnection technologies is increasingly becoming a top priority, particularly for the operation of SiC devices at relatively high temperatures. We propose a new interconnection method using nickel electroplating to replace Al wire bonding or die-bonding using solder materials. During the evaluation of the reliability of interconnections annealed at up to 500°C, we observed no significant changes in mechanical or electrical properties. We found that micro-plating connections can be used successfully for high-temperature-resistant packaging for SiC devices.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2013
EditorsHajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
PublisherTrans Tech Publications Ltd
Pages1110-1113
Number of pages4
ISBN (Print)9783038350101
DOIs
Publication statusPublished - 2014 Jan 1
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: 2013 Sep 292013 Oct 4

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period13/9/2913/10/4

Keywords

  • Bonding
  • High temperature
  • Interconnection
  • Ni micro-plating
  • Packaging

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Kato, N., Shigenaga, A., & Tatsumi, K. (2014). High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating. In H. Okumura, H. Okumura, H. Harima, T. Kimoto, M. Yoshimoto, H. Watanabe, T. Hatayama, H. Matsuura, Y. Sano, & T. Funaki (Eds.), Silicon Carbide and Related Materials 2013 (pp. 1110-1113). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.1110