High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating

Noriyuki Kato, Akiyoshi Shigenaga, Kohei Tatsumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

High temperature SiC devices require the materials for packaging also capable of working at higher temperature than those for Si devices. SiC devices are expected to help hybrid vehicle power control units (PCUs) produce higher power in a more compact size as SiC can withstand higher voltages and temperatures (above 300°C) than silicon with less power loss. The improvement of interconnection technologies is increasingly becoming a top priority, particularly for the operation of SiC devices at relatively high temperatures. We propose a new interconnection method using nickel electroplating to replace Al wire bonding or die-bonding using solder materials. During the evaluation of the reliability of interconnections annealed at up to 500°C, we observed no significant changes in mechanical or electrical properties. We found that micro-plating connections can be used successfully for high-temperature-resistant packaging for SiC devices.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages1110-1113
Number of pages4
Volume778-780
ISBN (Print)9783038350101
DOIs
Publication statusPublished - 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki
Duration: 2013 Sep 292013 Oct 4

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)02555476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CityMiyazaki
Period13/9/2913/10/4

Fingerprint

electroplating
Electroplating
packaging
Packaging
Temperature
power loss
Hybrid vehicles
Silicon
solders
Nickel
plating
Plating
Power control
Soldering alloys
high voltages
vehicles
Electric properties
electrical properties
nickel
wire

Keywords

  • Bonding
  • High temperature
  • Interconnection
  • Ni micro-plating
  • Packaging

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kato, N., Shigenaga, A., & Tatsumi, K. (2014). High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating. In Materials Science Forum (Vol. 778-780, pp. 1110-1113). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.1110

High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating. / Kato, Noriyuki; Shigenaga, Akiyoshi; Tatsumi, Kohei.

Materials Science Forum. Vol. 778-780 Trans Tech Publications Ltd, 2014. p. 1110-1113 (Materials Science Forum; Vol. 778-780).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kato, N, Shigenaga, A & Tatsumi, K 2014, High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating. in Materials Science Forum. vol. 778-780, Materials Science Forum, vol. 778-780, Trans Tech Publications Ltd, pp. 1110-1113, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, 13/9/29. https://doi.org/10.4028/www.scientific.net/MSF.778-780.1110
Kato N, Shigenaga A, Tatsumi K. High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating. In Materials Science Forum. Vol. 778-780. Trans Tech Publications Ltd. 2014. p. 1110-1113. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.778-780.1110
Kato, Noriyuki ; Shigenaga, Akiyoshi ; Tatsumi, Kohei. / High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating. Materials Science Forum. Vol. 778-780 Trans Tech Publications Ltd, 2014. pp. 1110-1113 (Materials Science Forum).
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