High temperature resistant packaging technology for SiC power module by using Ni micro-plating bonding

Kohei Tatsumi, Isamu Morisako, Keiko Wada, Minoru Fukuomori, Tomonori Iizuka, Nobuaki Sato, Koji Shimizu, Kazutoshi Ueda, Masayuki Hikita, Rikiya Kamimura, Naoki Kawanabe, Kazuhiko Sugiura, Kazuhiro Tsuruta, Keiji Toda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

New bonding technologies, which can deliver high-temperature thermal resistance that replaces solder bonding or Al wire bonding, have been strongly expected in order to maximize the performance of SiC power device. Aiming for application to the inverter system of HEV and EV, we have developed a new micro-plating interconnection technology named Nickel Micro Plating Bonding (NMPB), which enables the interconnection in a narrow space between electrodes and SiC devices via our newly designed lead frame, whose lead surface is formed into chevron shape. As for the bonding strength of NMPB, it was confirmed by shear tests that the bonds showed higher bonding strength than ordinary Pb free solder die bonding and no degradation even after HTS at 250°C for 1000hrs and after 1000cycle TCT(250°C/-45°C). The NMPB was applied to the manufacture of one leg SiC inverter power module using two pairs of SiC MOS-FETs and SBDs, which were interconnected with a newly designed lead frame for double sided cooling structure. After molding resin copper heat spreaders were formed on the outer surfaces of both sides of the NMPB leads by additive method. The module showed stable I-V characteristics at 250°C and lower switching loss. The reliability of the modules was confirmed by TCTs and power cycle tests.

Original languageEnglish
Title of host publicationProceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1451-1456
Number of pages6
ISBN (Electronic)9781728114989
DOIs
Publication statusPublished - 2019 May 1
Event69th IEEE Electronic Components and Technology Conference, ECTC 2019 - Las Vegas, United States
Duration: 2019 May 282019 May 31

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2019-May
ISSN (Print)0569-5503

Conference

Conference69th IEEE Electronic Components and Technology Conference, ECTC 2019
CountryUnited States
CityLas Vegas
Period19/5/2819/5/31

Fingerprint

Plating
Packaging
Nickel
Temperature
Lead
Spreaders
Field effect transistors
Heat resistance
Molding
Soldering alloys
Copper
Resins
Wire
Cooling
Degradation
Electrodes

Keywords

  • Cu lead
  • EV
  • Inverter
  • Micro-plating
  • MOS-FET
  • Ni
  • NMPB
  • Power module
  • SBD
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Tatsumi, K., Morisako, I., Wada, K., Fukuomori, M., Iizuka, T., Sato, N., ... Toda, K. (2019). High temperature resistant packaging technology for SiC power module by using Ni micro-plating bonding. In Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019 (pp. 1451-1456). [8811270] (Proceedings - Electronic Components and Technology Conference; Vol. 2019-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2019.00223

High temperature resistant packaging technology for SiC power module by using Ni micro-plating bonding. / Tatsumi, Kohei; Morisako, Isamu; Wada, Keiko; Fukuomori, Minoru; Iizuka, Tomonori; Sato, Nobuaki; Shimizu, Koji; Ueda, Kazutoshi; Hikita, Masayuki; Kamimura, Rikiya; Kawanabe, Naoki; Sugiura, Kazuhiko; Tsuruta, Kazuhiro; Toda, Keiji.

Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 1451-1456 8811270 (Proceedings - Electronic Components and Technology Conference; Vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tatsumi, K, Morisako, I, Wada, K, Fukuomori, M, Iizuka, T, Sato, N, Shimizu, K, Ueda, K, Hikita, M, Kamimura, R, Kawanabe, N, Sugiura, K, Tsuruta, K & Toda, K 2019, High temperature resistant packaging technology for SiC power module by using Ni micro-plating bonding. in Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019., 8811270, Proceedings - Electronic Components and Technology Conference, vol. 2019-May, Institute of Electrical and Electronics Engineers Inc., pp. 1451-1456, 69th IEEE Electronic Components and Technology Conference, ECTC 2019, Las Vegas, United States, 19/5/28. https://doi.org/10.1109/ECTC.2019.00223
Tatsumi K, Morisako I, Wada K, Fukuomori M, Iizuka T, Sato N et al. High temperature resistant packaging technology for SiC power module by using Ni micro-plating bonding. In Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 1451-1456. 8811270. (Proceedings - Electronic Components and Technology Conference). https://doi.org/10.1109/ECTC.2019.00223
Tatsumi, Kohei ; Morisako, Isamu ; Wada, Keiko ; Fukuomori, Minoru ; Iizuka, Tomonori ; Sato, Nobuaki ; Shimizu, Koji ; Ueda, Kazutoshi ; Hikita, Masayuki ; Kamimura, Rikiya ; Kawanabe, Naoki ; Sugiura, Kazuhiko ; Tsuruta, Kazuhiro ; Toda, Keiji. / High temperature resistant packaging technology for SiC power module by using Ni micro-plating bonding. Proceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 1451-1456 (Proceedings - Electronic Components and Technology Conference).
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abstract = "New bonding technologies, which can deliver high-temperature thermal resistance that replaces solder bonding or Al wire bonding, have been strongly expected in order to maximize the performance of SiC power device. Aiming for application to the inverter system of HEV and EV, we have developed a new micro-plating interconnection technology named Nickel Micro Plating Bonding (NMPB), which enables the interconnection in a narrow space between electrodes and SiC devices via our newly designed lead frame, whose lead surface is formed into chevron shape. As for the bonding strength of NMPB, it was confirmed by shear tests that the bonds showed higher bonding strength than ordinary Pb free solder die bonding and no degradation even after HTS at 250°C for 1000hrs and after 1000cycle TCT(250°C/-45°C). The NMPB was applied to the manufacture of one leg SiC inverter power module using two pairs of SiC MOS-FETs and SBDs, which were interconnected with a newly designed lead frame for double sided cooling structure. After molding resin copper heat spreaders were formed on the outer surfaces of both sides of the NMPB leads by additive method. The module showed stable I-V characteristics at 250°C and lower switching loss. The reliability of the modules was confirmed by TCTs and power cycle tests.",
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