High two-dimensional electron mobility in Si atomic-layer doped N-AlGaAs/GaAs grown by metalorganic chemical vapor deposition

Toshiki Makimoto, Naoki Kobayashi

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4 Citations (Scopus)

Abstract

Si atomic-layer doped n-AlGaAS/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 × 106 cm2/V · s is obtained at 4.2 K for a sheet electron concentration of 4.8 × 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume32
Issue number5 A
Publication statusPublished - 1993 May 1
Externally publishedYes

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Phonon scattering
Two dimensional electron gas
Electron mobility
Metallorganic chemical vapor deposition
Silanes
electron mobility
silanes
metalorganic chemical vapor deposition
aluminum gallium arsenides
electron gas
Acoustics
temperature dependence
acoustics
Electrons
scattering
electrons
Temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Si atomic-layer doped n-AlGaAS/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 × 106 cm2/V · s is obtained at 4.2 K for a sheet electron concentration of 4.8 × 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.",
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N2 - Si atomic-layer doped n-AlGaAS/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 × 106 cm2/V · s is obtained at 4.2 K for a sheet electron concentration of 4.8 × 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.

AB - Si atomic-layer doped n-AlGaAS/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 × 106 cm2/V · s is obtained at 4.2 K for a sheet electron concentration of 4.8 × 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.

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