Abstract
Si atomic-layer doped n-AlGaAS/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 × 106 cm2/V · s is obtained at 4.2 K for a sheet electron concentration of 4.8 × 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 32 |
| Issue number | 5 A |
| Publication status | Published - 1993 May 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
High two-dimensional electron mobility in Si atomic-layer doped N-AlGaAs/GaAs grown by metalorganic chemical vapor deposition. / Makimoto, Toshiki; Kobayashi, Naoki.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 32, No. 5 A, 01.05.1993.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High two-dimensional electron mobility in Si atomic-layer doped N-AlGaAs/GaAs grown by metalorganic chemical vapor deposition
AU - Makimoto, Toshiki
AU - Kobayashi, Naoki
PY - 1993/5/1
Y1 - 1993/5/1
N2 - Si atomic-layer doped n-AlGaAS/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 × 106 cm2/V · s is obtained at 4.2 K for a sheet electron concentration of 4.8 × 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.
AB - Si atomic-layer doped n-AlGaAS/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 × 106 cm2/V · s is obtained at 4.2 K for a sheet electron concentration of 4.8 × 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.
UR - http://www.scopus.com/inward/record.url?scp=0027589897&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027589897&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0027589897
VL - 32
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 A
ER -