High two-dimensional electron mobility in si atomic-layer doped n-algaas/gaas grown by metalorganic chemical vapor deposition

Si atomic-layer doped n-AlGaAs/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 x10⁶ cm²/Vs is obtained at 4.2 K for a sheet electron concentration of 4.8 x 10¹¹ cm^-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.