High two-dimensional electron mobility in si atomic-layer doped n-algaas/gaas grown by metalorganic chemical vapor deposition

Toshiki Makimoto; Naoki Kobayashi

doi:10.1143/JJAP.32.L648

High two-dimensional electron mobility in si atomic-layer doped n-algaas/gaas grown by metalorganic chemical vapor deposition

Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Si atomic-layer doped n-AlGaAs/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 x10⁶ cm²/Vs is obtained at 4.2 K for a sheet electron concentration of 4.8 x 10¹¹ cm^-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.

Original language	English
Pages (from-to)	L648-L649
Journal	Japanese journal of applied physics
Volume	32
Issue number	5 A
DOIs	https://doi.org/10.1143/JJAP.32.L648
Publication status	Published - 1993 May
Externally published	Yes

Keywords

2DEG
Atomic-layer doping
MOCVD
Mobility
N-AIGaAs/GaAs

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.32.L648

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abstract = "Si atomic-layer doped n-AlGaAs/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 x106 cm2/Vs is obtained at 4.2 K for a sheet electron concentration of 4.8 x 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.",

keywords = "2DEG, Atomic-layer doping, MOCVD, Mobility, N-AIGaAs/GaAs",

author = "Toshiki Makimoto and Naoki Kobayashi",

year = "1993",

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language = "English",

volume = "32",

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T1 - High two-dimensional electron mobility in si atomic-layer doped n-algaas/gaas grown by metalorganic chemical vapor deposition

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 1993/5

Y1 - 1993/5

N2 - Si atomic-layer doped n-AlGaAs/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 x106 cm2/Vs is obtained at 4.2 K for a sheet electron concentration of 4.8 x 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.

AB - Si atomic-layer doped n-AlGaAs/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 x106 cm2/Vs is obtained at 4.2 K for a sheet electron concentration of 4.8 x 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.

KW - 2DEG

KW - Atomic-layer doping

KW - MOCVD

KW - Mobility

KW - N-AIGaAs/GaAs

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 A

ER -

High two-dimensional electron mobility in si atomic-layer doped n-algaas/gaas grown by metalorganic chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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