High two-dimensional electron mobility in si atomic-layer doped n-algaas/gaas grown by metalorganic chemical vapor deposition

Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Si atomic-layer doped n-AlGaAs/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 x106 cm2/Vs is obtained at 4.2 K for a sheet electron concentration of 4.8 x 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.

Original languageEnglish
Pages (from-to)L648-L649
JournalJapanese journal of applied physics
Volume32
Issue number5 A
DOIs
Publication statusPublished - 1993 May
Externally publishedYes

Keywords

  • 2DEG
  • Atomic-layer doping
  • MOCVD
  • Mobility
  • N-AIGaAs/GaAs

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'High two-dimensional electron mobility in si atomic-layer doped n-algaas/gaas grown by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

  • Cite this