Abstract
Si atomic-layer doped n-AlGaAs/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 x106 cm2/Vs is obtained at 4.2 K for a sheet electron concentration of 4.8 x 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.
Original language | English |
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Pages (from-to) | L648-L649 |
Journal | Japanese journal of applied physics |
Volume | 32 |
Issue number | 5 A |
DOIs | |
Publication status | Published - 1993 May |
Externally published | Yes |
Keywords
- 2DEG
- Atomic-layer doping
- MOCVD
- Mobility
- N-AIGaAs/GaAs
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)