High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor

M. Syamsul, Y. Kitabayashi, D. Matsumura, T. Saito, Y. Shintani, H. Kawarada

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

We fabricated and characterized black polycrystalline diamond field effect transistors. By implementing a C-H bonded channel with a wide gate-drain length up to 20 μm, a breakdown voltage of 1.8 kV was achieved, which is the highest value reported for a diamond field effect transistor (FET) to date. Several of our devices achieved a breakdown voltage/wide gate-drain length ratio > 100 V/μm. This is comparable to the performance of lateral SiC and GaN FETs. We investigated the effects of voltage stress up to 2.0 kV, and showed that the maximum current density fell to 26% of its initial value of 2.42 mA/mm before the device eventually broke down at 1.1 kV.

Original languageEnglish
Article number203504
JournalApplied Physics Letters
Volume109
Issue number20
DOIs
Publication statusPublished - 2016 Nov 14

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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