High-voltage operation with high current gain of pnp AlGaNGaN heterojunction bipolar transistors with thin n -type GaN base

Kazuhide Kumakura, Toshiki Makimoto

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A pnp AlGaNGaN heterojunction bipolar transistor (HBT) with a thin n-GaN base shows high-voltage operation with high current gain in the common-emitter configuration at room temperature. The device structure was grown by metalorganic vapor phase epitaxy on a sapphire substrate. The emitter area is 30 μm×50 μm. The HBT can operate at high voltage of 70 V with the maximum current gain of 40 at the collector current of 10 mA. The maximum output power density is 172 kW cm2. Transport characteristics in the HBT were also investigated. At small collector current, the current gain is dominated by the recombination current at the emitter-base heterojunction. At moderate collector current, the calculated minority hole diffusion length well agreed with that determined from electron beam induced current measurements, indicating the current gain is dominated by the minority carrier diffusion. At large collector current, a high injection effect was observed in the current gain characteristics.

Original languageEnglish
Article number023506
JournalApplied Physics Letters
Volume86
Issue number2
DOIs
Publication statusPublished - 2005 Jan 10
Externally publishedYes

Fingerprint

bipolar transistors
high current
heterojunctions
high voltages
accumulators
emitters
minorities
diffusion length
minority carriers
vapor phase epitaxy
radiant flux density
sapphire
electron beams
injection
output
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-voltage operation with high current gain of pnp AlGaNGaN heterojunction bipolar transistors with thin n -type GaN base. / Kumakura, Kazuhide; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 86, No. 2, 023506, 10.01.2005.

Research output: Contribution to journalArticle

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