Abstract
ZnSe epilayers grown by MBE on (100) GaAs substrates are optically investigated in comparison with bulk ZnSe crystals using photoluminescence and excitation spectroscopy under high excitation densities. High‐density luminescence bands appear in both materials for relatively low excitation densities (about 30 kW/cm2), but their energetic positions do not correspond. The intensity‐dependent shape, and the behaviour of the dominant band in bulk ZnSe in excitation spectroscopy are similar to that of the M band in other II VI semiconductors. The main bands growing up in the ZnSe/GaAs films are much more corresponding to typical P‐band emission of exciton‐exciton collision. Further, the transmission of ZnSe epilayers released from the GaAs substrate is studied in dependence on the laser intensity.
| Original language | English |
|---|---|
| Pages (from-to) | 443-448 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (B): Basic Research |
| Volume | 159 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1990 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region. / Presser, N.; Kudlek, G.; Gutowski, J.; Durbin, S. M.; Menke, D. R.; Kobayashi, Masakazu; Gunshor, R. L.
In: Physica Status Solidi (B): Basic Research, Vol. 159, No. 1, 1990, p. 443-448.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region
AU - Presser, N.
AU - Kudlek, G.
AU - Gutowski, J.
AU - Durbin, S. M.
AU - Menke, D. R.
AU - Kobayashi, Masakazu
AU - Gunshor, R. L.
PY - 1990
Y1 - 1990
N2 - ZnSe epilayers grown by MBE on (100) GaAs substrates are optically investigated in comparison with bulk ZnSe crystals using photoluminescence and excitation spectroscopy under high excitation densities. High‐density luminescence bands appear in both materials for relatively low excitation densities (about 30 kW/cm2), but their energetic positions do not correspond. The intensity‐dependent shape, and the behaviour of the dominant band in bulk ZnSe in excitation spectroscopy are similar to that of the M band in other II VI semiconductors. The main bands growing up in the ZnSe/GaAs films are much more corresponding to typical P‐band emission of exciton‐exciton collision. Further, the transmission of ZnSe epilayers released from the GaAs substrate is studied in dependence on the laser intensity.
AB - ZnSe epilayers grown by MBE on (100) GaAs substrates are optically investigated in comparison with bulk ZnSe crystals using photoluminescence and excitation spectroscopy under high excitation densities. High‐density luminescence bands appear in both materials for relatively low excitation densities (about 30 kW/cm2), but their energetic positions do not correspond. The intensity‐dependent shape, and the behaviour of the dominant band in bulk ZnSe in excitation spectroscopy are similar to that of the M band in other II VI semiconductors. The main bands growing up in the ZnSe/GaAs films are much more corresponding to typical P‐band emission of exciton‐exciton collision. Further, the transmission of ZnSe epilayers released from the GaAs substrate is studied in dependence on the laser intensity.
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U2 - 10.1002/pssb.2221590152
DO - 10.1002/pssb.2221590152
M3 - Article
VL - 159
SP - 443
EP - 448
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 1
ER -