High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region

N. Presser; G. Kudlek; J. Gutowski; S. M. Durbin; D. R. Menke; Masakazu Kobayashi; R. L. Gunshor

doi:10.1002/pssb.2221590152

High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region

N. Presser, G. Kudlek, J. Gutowski, S. M. Durbin, D. R. Menke, Masakazu Kobayashi, R. L. Gunshor

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

ZnSe epilayers grown by MBE on (100) GaAs substrates are optically investigated in comparison with bulk ZnSe crystals using photoluminescence and excitation spectroscopy under high excitation densities. High‐density luminescence bands appear in both materials for relatively low excitation densities (about 30 kW/cm²), but their energetic positions do not correspond. The intensity‐dependent shape, and the behaviour of the dominant band in bulk ZnSe in excitation spectroscopy are similar to that of the M band in other II VI semiconductors. The main bands growing up in the ZnSe/GaAs films are much more corresponding to typical P‐band emission of exciton‐exciton collision. Further, the transmission of ZnSe epilayers released from the GaAs substrate is studied in dependence on the laser intensity.

Original language	English
Pages (from-to)	443-448
Number of pages	6
Journal	Physica Status Solidi (B): Basic Research
Volume	159
Issue number	1
DOIs	https://doi.org/10.1002/pssb.2221590152
Publication status	Published - 1990
Externally published	Yes

Fingerprint

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Presser, N., Kudlek, G., Gutowski, J., Durbin, S. M., Menke, D. R., Kobayashi, M., & Gunshor, R. L. (1990). High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region. Physica Status Solidi (B): Basic Research, 159(1), 443-448. https://doi.org/10.1002/pssb.2221590152

@article{01e78c9533ee49dd91ffd218922a06d0,

title = "High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region",

abstract = "ZnSe epilayers grown by MBE on (100) GaAs substrates are optically investigated in comparison with bulk ZnSe crystals using photoluminescence and excitation spectroscopy under high excitation densities. High‐density luminescence bands appear in both materials for relatively low excitation densities (about 30 kW/cm2), but their energetic positions do not correspond. The intensity‐dependent shape, and the behaviour of the dominant band in bulk ZnSe in excitation spectroscopy are similar to that of the M band in other II VI semiconductors. The main bands growing up in the ZnSe/GaAs films are much more corresponding to typical P‐band emission of exciton‐exciton collision. Further, the transmission of ZnSe epilayers released from the GaAs substrate is studied in dependence on the laser intensity.",

author = "N. Presser and G. Kudlek and J. Gutowski and Durbin, {S. M.} and Menke, {D. R.} and Masakazu Kobayashi and Gunshor, {R. L.}",

year = "1990",

doi = "10.1002/pssb.2221590152",

language = "English",

volume = "159",

pages = "443--448",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region

AU - Presser, N.

AU - Kudlek, G.

AU - Gutowski, J.

AU - Durbin, S. M.

AU - Menke, D. R.

AU - Kobayashi, Masakazu

AU - Gunshor, R. L.

PY - 1990

Y1 - 1990

N2 - ZnSe epilayers grown by MBE on (100) GaAs substrates are optically investigated in comparison with bulk ZnSe crystals using photoluminescence and excitation spectroscopy under high excitation densities. High‐density luminescence bands appear in both materials for relatively low excitation densities (about 30 kW/cm2), but their energetic positions do not correspond. The intensity‐dependent shape, and the behaviour of the dominant band in bulk ZnSe in excitation spectroscopy are similar to that of the M band in other II VI semiconductors. The main bands growing up in the ZnSe/GaAs films are much more corresponding to typical P‐band emission of exciton‐exciton collision. Further, the transmission of ZnSe epilayers released from the GaAs substrate is studied in dependence on the laser intensity.

AB - ZnSe epilayers grown by MBE on (100) GaAs substrates are optically investigated in comparison with bulk ZnSe crystals using photoluminescence and excitation spectroscopy under high excitation densities. High‐density luminescence bands appear in both materials for relatively low excitation densities (about 30 kW/cm2), but their energetic positions do not correspond. The intensity‐dependent shape, and the behaviour of the dominant band in bulk ZnSe in excitation spectroscopy are similar to that of the M band in other II VI semiconductors. The main bands growing up in the ZnSe/GaAs films are much more corresponding to typical P‐band emission of exciton‐exciton collision. Further, the transmission of ZnSe epilayers released from the GaAs substrate is studied in dependence on the laser intensity.

UR - http://www.scopus.com/inward/record.url?scp=84987098030&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84987098030&partnerID=8YFLogxK

U2 - 10.1002/pssb.2221590152

DO - 10.1002/pssb.2221590152

M3 - Article

AN - SCOPUS:84987098030

VL - 159

SP - 443

EP - 448

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 1

ER -

Access to Document

10.1002/pssb.2221590152