High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region

N. Presser*, G. Kudlek, J. Gutowski, S. M. Durbin, D. R. Menke, Masakazu Kobayashi, R. L. Gunshor

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


ZnSe epilayers grown by MBE on (100) GaAs substrates are optically investigated in comparison with bulk ZnSe crystals using photoluminescence and excitation spectroscopy under high excitation densities. High‐density luminescence bands appear in both materials for relatively low excitation densities (about 30 kW/cm2), but their energetic positions do not correspond. The intensity‐dependent shape, and the behaviour of the dominant band in bulk ZnSe in excitation spectroscopy are similar to that of the M band in other II VI semiconductors. The main bands growing up in the ZnSe/GaAs films are much more corresponding to typical P‐band emission of exciton‐exciton collision. Further, the transmission of ZnSe epilayers released from the GaAs substrate is studied in dependence on the laser intensity.

Original languageEnglish
Pages (from-to)443-448
Number of pages6
JournalPhysica Status Solidi (B): Basic Research
Issue number1
Publication statusPublished - 1990
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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