Higher-order shear mode FBAR using polarization-inverted layers of (112̄0) textured ZnO films

Miyamoto Yoshinori, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Second-order shear mode FBAR using (1120) textured ZnO film was fabricated. This FBAR contained two ZnO layers with opposite polarizations. Crystallites growth directions of the ZnO layers were clarified by X-ray pole figure analysis. Characteristics of this FBAR were experimentally and theoretically investigated.

Original languageEnglish
Title of host publication2005 IEEE Ultrasonics Symposium
Pages1828-1831
Number of pages4
DOIs
Publication statusPublished - 2005 Dec 1
Externally publishedYes
Event2005 IEEE Ultrasonics Symposium - Rotterdam, Netherlands
Duration: 2005 Sep 182005 Sep 21

Publication series

NameProceedings - IEEE Ultrasonics Symposium
Volume3
ISSN (Print)1051-0117

Other

Other2005 IEEE Ultrasonics Symposium
CountryNetherlands
CityRotterdam
Period05/9/1805/9/21

Keywords

  • (112̄0) textured zinc oxide
  • Component
  • Higher order mode FBAR
  • Polarization-inverted piezoelectric layers
  • Shear mode

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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  • Cite this

    Yoshinori, M., Yanagitani, T., Matsukawa, M., & Watanabe, Y. (2005). Higher-order shear mode FBAR using polarization-inverted layers of (112̄0) textured ZnO films. In 2005 IEEE Ultrasonics Symposium (pp. 1828-1831). [1603224] (Proceedings - IEEE Ultrasonics Symposium; Vol. 3). https://doi.org/10.1109/ULTSYM.2005.1603224