Higher-order shear mode FBAR using polarization-inverted layers of (112̄0) textured ZnO films

Miyamoto Yoshinori, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Second-order shear mode FBAR using (1120) textured ZnO film was fabricated. This FBAR contained two ZnO layers with opposite polarizations. Crystallites growth directions of the ZnO layers were clarified by X-ray pole figure analysis. Characteristics of this FBAR were experimentally and theoretically investigated.

Original languageEnglish
Title of host publicationProceedings - IEEE Ultrasonics Symposium
Pages1828-1831
Number of pages4
Volume3
DOIs
Publication statusPublished - 2005
Externally publishedYes
Event2005 IEEE Ultrasonics Symposium - Rotterdam, Netherlands
Duration: 2005 Sep 182005 Sep 21

Other

Other2005 IEEE Ultrasonics Symposium
CountryNetherlands
CityRotterdam
Period05/9/1805/9/21

Fingerprint

Crystallites
Poles
Polarization
X rays

Keywords

  • (112̄0) textured zinc oxide
  • Component
  • Higher order mode FBAR
  • Polarization-inverted piezoelectric layers
  • Shear mode

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yoshinori, M., Yanagitani, T., Matsukawa, M., & Watanabe, Y. (2005). Higher-order shear mode FBAR using polarization-inverted layers of (112̄0) textured ZnO films. In Proceedings - IEEE Ultrasonics Symposium (Vol. 3, pp. 1828-1831). [1603224] https://doi.org/10.1109/ULTSYM.2005.1603224

Higher-order shear mode FBAR using polarization-inverted layers of (112̄0) textured ZnO films. / Yoshinori, Miyamoto; Yanagitani, Takahiko; Matsukawa, Mami; Watanabe, Yoshiaki.

Proceedings - IEEE Ultrasonics Symposium. Vol. 3 2005. p. 1828-1831 1603224.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yoshinori, M, Yanagitani, T, Matsukawa, M & Watanabe, Y 2005, Higher-order shear mode FBAR using polarization-inverted layers of (112̄0) textured ZnO films. in Proceedings - IEEE Ultrasonics Symposium. vol. 3, 1603224, pp. 1828-1831, 2005 IEEE Ultrasonics Symposium, Rotterdam, Netherlands, 05/9/18. https://doi.org/10.1109/ULTSYM.2005.1603224
Yoshinori M, Yanagitani T, Matsukawa M, Watanabe Y. Higher-order shear mode FBAR using polarization-inverted layers of (112̄0) textured ZnO films. In Proceedings - IEEE Ultrasonics Symposium. Vol. 3. 2005. p. 1828-1831. 1603224 https://doi.org/10.1109/ULTSYM.2005.1603224
Yoshinori, Miyamoto ; Yanagitani, Takahiko ; Matsukawa, Mami ; Watanabe, Yoshiaki. / Higher-order shear mode FBAR using polarization-inverted layers of (112̄0) textured ZnO films. Proceedings - IEEE Ultrasonics Symposium. Vol. 3 2005. pp. 1828-1831
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