Highly air- and moisture-stable hole-doped carbon nanotube films achieved using boron-based oxidant

Kazuma Funahashi, Naoki Tanaka, Yoshiaki Shoji, Naoki Imazu, Ko Nakayama, Kaito Kanahashi, Hiroyuki Shirae, Suguru Noda, Hiromichi Ohta, Takanori Fukushima, Taishi Takenobu

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    Hole doping into carbon nanotubes can be achieved. However, the doped nanotubes usually suffer from the lack of air and moisture stability, thus, they eventually lose their improved electrical properties. Here, we report that a salt of the two-coordinate boron cation Mes2B+ (Mes: 2,4,6-trimethylphenyl group) can serve as an efficient hole-doping reagent to produce nanotubes with markedly high stability in the presence of air and moisture. Upon doping, the resistances of the nanotubes decreased, and these states were maintained for one month in air. The hole-doped nanotube films showed a minimal increase in resistance even upon humidification with a relative humidity of 90%.

    Original languageEnglish
    Article number035101
    JournalApplied Physics Express
    Volume10
    Issue number3
    DOIs
    Publication statusPublished - 2017 Mar 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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  • Cite this

    Funahashi, K., Tanaka, N., Shoji, Y., Imazu, N., Nakayama, K., Kanahashi, K., Shirae, H., Noda, S., Ohta, H., Fukushima, T., & Takenobu, T. (2017). Highly air- and moisture-stable hole-doped carbon nanotube films achieved using boron-based oxidant. Applied Physics Express, 10(3), [035101]. https://doi.org/10.7567/APEX.10.035101