Highly flexible MoS 2 thin-film transistors with ion gel dielectrics

Jiang Pu, Yohei Yomogida, Keng Ku Liu, Lain Jong Li, Yoshihiro Iwasa, Taishi Takenobu

    Research output: Contribution to journalArticle

    505 Citations (Scopus)

    Abstract

    Molybdenum disulfide (MoS 2) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm 2/(V ·s)) and a high on/off current ratio (10 5). Furthermore, the MoS 2 transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS 2 films make them suitable for use in large-area flexible electronics.

    Original languageEnglish
    Pages (from-to)4013-4017
    Number of pages5
    JournalNano Letters
    Volume12
    Issue number8
    DOIs
    Publication statusPublished - 2012 Aug 8

    Fingerprint

    Thin film transistors
    transistors
    Gels
    gels
    Ions
    Flexible electronics
    Gate dielectrics
    thin films
    Threshold voltage
    Molybdenum
    molybdenum disulfides
    Transistors
    ions
    Degradation
    threshold voltage
    low voltage
    flexibility
    curvature
    degradation
    radii

    Keywords

    • electric double-layer transistor
    • flexible electronics
    • molybdenum disulfide
    • transition metal dichalcogenide
    • Two-dimensional material

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Mechanical Engineering

    Cite this

    Pu, J., Yomogida, Y., Liu, K. K., Li, L. J., Iwasa, Y., & Takenobu, T. (2012). Highly flexible MoS 2 thin-film transistors with ion gel dielectrics. Nano Letters, 12(8), 4013-4017. https://doi.org/10.1021/nl301335q

    Highly flexible MoS 2 thin-film transistors with ion gel dielectrics. / Pu, Jiang; Yomogida, Yohei; Liu, Keng Ku; Li, Lain Jong; Iwasa, Yoshihiro; Takenobu, Taishi.

    In: Nano Letters, Vol. 12, No. 8, 08.08.2012, p. 4013-4017.

    Research output: Contribution to journalArticle

    Pu, J, Yomogida, Y, Liu, KK, Li, LJ, Iwasa, Y & Takenobu, T 2012, 'Highly flexible MoS 2 thin-film transistors with ion gel dielectrics', Nano Letters, vol. 12, no. 8, pp. 4013-4017. https://doi.org/10.1021/nl301335q
    Pu J, Yomogida Y, Liu KK, Li LJ, Iwasa Y, Takenobu T. Highly flexible MoS 2 thin-film transistors with ion gel dielectrics. Nano Letters. 2012 Aug 8;12(8):4013-4017. https://doi.org/10.1021/nl301335q
    Pu, Jiang ; Yomogida, Yohei ; Liu, Keng Ku ; Li, Lain Jong ; Iwasa, Yoshihiro ; Takenobu, Taishi. / Highly flexible MoS 2 thin-film transistors with ion gel dielectrics. In: Nano Letters. 2012 ; Vol. 12, No. 8. pp. 4013-4017.
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