Highly flexible MoS 2 thin-film transistors with ion gel dielectrics

Jiang Pu, Yohei Yomogida, Keng Ku Liu, Lain Jong Li*, Yoshihiro Iwasa, Taishi Takenobu

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    699 Citations (Scopus)


    Molybdenum disulfide (MoS 2) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm 2/(V ·s)) and a high on/off current ratio (10 5). Furthermore, the MoS 2 transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS 2 films make them suitable for use in large-area flexible electronics.

    Original languageEnglish
    Pages (from-to)4013-4017
    Number of pages5
    JournalNano Letters
    Issue number8
    Publication statusPublished - 2012 Aug 8


    • electric double-layer transistor
    • flexible electronics
    • molybdenum disulfide
    • transition metal dichalcogenide
    • Two-dimensional material

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Mechanical Engineering


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