Highly oriented c-axis 23° tilted ZnO films with high quasi-shear mode electromechanical coupling coefficients

Takuya Matsuo; Takahiko Yanagitani; Mami Matsukawa; Yoshiaki Watanabe

doi:10.1109/ULTSYM.2007.309

Highly oriented c-axis 23° tilted ZnO films with high quasi-shear mode electromechanical coupling coefficients

Takuya Matsuo, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

A quasi-shear mode piezoelectric film with high electromechanical coupling coefficient k'₁₅ is attractive for shear wave transducers, shear mode FBAR and SH-SAW devices. The single crystalline ideal ZnO film with c-axis-tilt angle of 28° from the surface normal of the film has high k'₁₅ value of 0.38. In this study, we have investigated c-axis-tilted ZnO films to obtain sufficient tilt angle and good crystalline alignment using RF magnetron sputtering technique. We focused on the angle between the substrate surface and target surface during the sputtering deposition. In case that the film was deposited on the substrate set at 90° to the target surface, relatively large c-axis tilted angles of 22.6°-26.2° were obtained. Moreover, small ψ-scan FWHM values from 6.7° to 7.8° of the film indicated good crystalline alignment. Finally, k'₁₅ value of this film was estimated as 0.26, which was the highest value ever reported for c-axis-tilted ZnO or AlN films.

Original language	English
Title of host publication	2007 IEEE Ultrasonics Symposium Proceedings, IUS
Pages	1229-1232
Number of pages	4
DOIs	https://doi.org/10.1109/ULTSYM.2007.309
Publication status	Published - 2007 Dec 1
Externally published	Yes
Event	2007 IEEE Ultrasonics Symposium, IUS - New York, NY, United States Duration: 2007 Oct 28 → 2007 Oct 31

Publication series

Name	Proceedings - IEEE Ultrasonics Symposium
ISSN (Print)	1051-0117

Other

Other	2007 IEEE Ultrasonics Symposium, IUS
Country	United States
City	New York, NY
Period	07/10/28 → 07/10/31

Keywords

C-axis-tilted ZnO film
Quasi-shear electromechanical coupling coefficient
RF magnetron sputtering technique

ASJC Scopus subject areas

Acoustics and Ultrasonics

Access to Document

10.1109/ULTSYM.2007.309

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Highly oriented c-axis 23° tilted ZnO films with high quasi-shear mode electromechanical coupling coefficients. / Matsuo, Takuya; Yanagitani, Takahiko; Matsukawa, Mami; Watanabe, Yoshiaki.

2007 IEEE Ultrasonics Symposium Proceedings, IUS. 2007. p. 1229-1232 4409882 (Proceedings - IEEE Ultrasonics Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsuo, T, Yanagitani, T, Matsukawa, M & Watanabe, Y 2007, Highly oriented c-axis 23° tilted ZnO films with high quasi-shear mode electromechanical coupling coefficients. in 2007 IEEE Ultrasonics Symposium Proceedings, IUS., 4409882, Proceedings - IEEE Ultrasonics Symposium, pp. 1229-1232, 2007 IEEE Ultrasonics Symposium, IUS, New York, NY, United States, 07/10/28. https://doi.org/10.1109/ULTSYM.2007.309

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abstract = "A quasi-shear mode piezoelectric film with high electromechanical coupling coefficient k'15 is attractive for shear wave transducers, shear mode FBAR and SH-SAW devices. The single crystalline ideal ZnO film with c-axis-tilt angle of 28° from the surface normal of the film has high k'15 value of 0.38. In this study, we have investigated c-axis-tilted ZnO films to obtain sufficient tilt angle and good crystalline alignment using RF magnetron sputtering technique. We focused on the angle between the substrate surface and target surface during the sputtering deposition. In case that the film was deposited on the substrate set at 90° to the target surface, relatively large c-axis tilted angles of 22.6°-26.2° were obtained. Moreover, small ψ-scan FWHM values from 6.7° to 7.8° of the film indicated good crystalline alignment. Finally, k'15 value of this film was estimated as 0.26, which was the highest value ever reported for c-axis-tilted ZnO or AlN films.",

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AB - A quasi-shear mode piezoelectric film with high electromechanical coupling coefficient k'15 is attractive for shear wave transducers, shear mode FBAR and SH-SAW devices. The single crystalline ideal ZnO film with c-axis-tilt angle of 28° from the surface normal of the film has high k'15 value of 0.38. In this study, we have investigated c-axis-tilted ZnO films to obtain sufficient tilt angle and good crystalline alignment using RF magnetron sputtering technique. We focused on the angle between the substrate surface and target surface during the sputtering deposition. In case that the film was deposited on the substrate set at 90° to the target surface, relatively large c-axis tilted angles of 22.6°-26.2° were obtained. Moreover, small ψ-scan FWHM values from 6.7° to 7.8° of the film indicated good crystalline alignment. Finally, k'15 value of this film was estimated as 0.26, which was the highest value ever reported for c-axis-tilted ZnO or AlN films.

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