Highly oriented ZnO thin films deposited by grazing ion-beam sputtering

Application to acoustic shear wave excitation in the GHz range

Takahiko Yanagitani, Masato Kiuchi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In-plane and out-of-plane oriented (112̄0) ZnO thin films are attractive for acoustic shear wave excitation in the GHz range. In this study it is proposed that highly oriented and submicron-thick (112̄0) ZnO thin films can be fabricated using an ion beam sputter-deposition system with grazing incidence to the substrate surface. The formation of the (112̄0) texture cannot only be attributed to the well-known ion-channeling effect or to the self-shadowing effect since the ion beam incidence direction in the system does not correspond to the ion-channeling direction of the ZnO film (the [112̄0] or [112̄0] direction). The full width at half-maximum (FWHM) values of the φ- and ψ-scan profile curves of the (112̄2) X-ray diffraction poles were measured to be 5 and 28°, respectively. A shear-wave transducer with a 0.9-μm-thick film exhibited a one-way conversion loss of less than 20 dB at 1-2 GHz and a 3 dB fractional bandwidth of 100%, without any longitudinal wave excitation.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number45-49
DOIs
Publication statusPublished - 2007 Dec 14
Externally publishedYes

Fingerprint

Shear waves
wave excitation
grazing
Ion beams
S waves
Sputtering
sputtering
ion beams
Acoustic waves
Thin films
Sputter deposition
acoustics
Ions
self shadowing
thin films
Full width at half maximum
Thick films
Transducers
Poles
Textures

Keywords

  • (112̄0) textured ZnO film
  • Acoustic shear wave excitation
  • In-plane texture formation
  • Ion beam sputter-deposition
  • Ion-beam-induced texture evolution

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{5c99597914184231b71b135706e88b64,
title = "Highly oriented ZnO thin films deposited by grazing ion-beam sputtering: Application to acoustic shear wave excitation in the GHz range",
abstract = "In-plane and out-of-plane oriented (112̄0) ZnO thin films are attractive for acoustic shear wave excitation in the GHz range. In this study it is proposed that highly oriented and submicron-thick (112̄0) ZnO thin films can be fabricated using an ion beam sputter-deposition system with grazing incidence to the substrate surface. The formation of the (112̄0) texture cannot only be attributed to the well-known ion-channeling effect or to the self-shadowing effect since the ion beam incidence direction in the system does not correspond to the ion-channeling direction of the ZnO film (the [112̄0] or [112̄0] direction). The full width at half-maximum (FWHM) values of the φ- and ψ-scan profile curves of the (112̄2) X-ray diffraction poles were measured to be 5 and 28°, respectively. A shear-wave transducer with a 0.9-μm-thick film exhibited a one-way conversion loss of less than 20 dB at 1-2 GHz and a 3 dB fractional bandwidth of 100{\%}, without any longitudinal wave excitation.",
keywords = "(112̄0) textured ZnO film, Acoustic shear wave excitation, In-plane texture formation, Ion beam sputter-deposition, Ion-beam-induced texture evolution",
author = "Takahiko Yanagitani and Masato Kiuchi",
year = "2007",
month = "12",
day = "14",
doi = "10.1143/JJAP.46.L1167",
language = "English",
volume = "46",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "45-49",

}

TY - JOUR

T1 - Highly oriented ZnO thin films deposited by grazing ion-beam sputtering

T2 - Application to acoustic shear wave excitation in the GHz range

AU - Yanagitani, Takahiko

AU - Kiuchi, Masato

PY - 2007/12/14

Y1 - 2007/12/14

N2 - In-plane and out-of-plane oriented (112̄0) ZnO thin films are attractive for acoustic shear wave excitation in the GHz range. In this study it is proposed that highly oriented and submicron-thick (112̄0) ZnO thin films can be fabricated using an ion beam sputter-deposition system with grazing incidence to the substrate surface. The formation of the (112̄0) texture cannot only be attributed to the well-known ion-channeling effect or to the self-shadowing effect since the ion beam incidence direction in the system does not correspond to the ion-channeling direction of the ZnO film (the [112̄0] or [112̄0] direction). The full width at half-maximum (FWHM) values of the φ- and ψ-scan profile curves of the (112̄2) X-ray diffraction poles were measured to be 5 and 28°, respectively. A shear-wave transducer with a 0.9-μm-thick film exhibited a one-way conversion loss of less than 20 dB at 1-2 GHz and a 3 dB fractional bandwidth of 100%, without any longitudinal wave excitation.

AB - In-plane and out-of-plane oriented (112̄0) ZnO thin films are attractive for acoustic shear wave excitation in the GHz range. In this study it is proposed that highly oriented and submicron-thick (112̄0) ZnO thin films can be fabricated using an ion beam sputter-deposition system with grazing incidence to the substrate surface. The formation of the (112̄0) texture cannot only be attributed to the well-known ion-channeling effect or to the self-shadowing effect since the ion beam incidence direction in the system does not correspond to the ion-channeling direction of the ZnO film (the [112̄0] or [112̄0] direction). The full width at half-maximum (FWHM) values of the φ- and ψ-scan profile curves of the (112̄2) X-ray diffraction poles were measured to be 5 and 28°, respectively. A shear-wave transducer with a 0.9-μm-thick film exhibited a one-way conversion loss of less than 20 dB at 1-2 GHz and a 3 dB fractional bandwidth of 100%, without any longitudinal wave excitation.

KW - (112̄0) textured ZnO film

KW - Acoustic shear wave excitation

KW - In-plane texture formation

KW - Ion beam sputter-deposition

KW - Ion-beam-induced texture evolution

UR - http://www.scopus.com/inward/record.url?scp=54249118694&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54249118694&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.L1167

DO - 10.1143/JJAP.46.L1167

M3 - Article

VL - 46

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 45-49

ER -