Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation

T. Kuroi, S. Shimizu, A. Furukawa, S. Komori, Y. Kawasaki, S. Kusunoki, Y. Okumura, Masahide Inuishi, N. Tsubouchi, K. Horie

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

An advanced nitrogen implantation technique is proposed. New technique can remarkably suppress the hot carrier degradation. Since the generation of interface states can be reduced by the incorporation of nitrogen at the interface between a substrate and SiO2 spacers. Moreover, the ultra shallow junction without the increase in leakage current can be formed by nitrogen implantation into the source/drain. Since the secondary defects induced by nitrogen implantation can act as a surface proximity gettering (SPG) site.

Original languageEnglish
Pages (from-to)19-20
Number of pages2
JournalUnknown Journal
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

spacers
proximity
implantation
field effect transistors
Nitrogen
nitrogen
Oxides
oxides
Hot carriers
Interface states
Leakage currents
leakage
degradation
Degradation
Defects
defects
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kuroi, T., Shimizu, S., Furukawa, A., Komori, S., Kawasaki, Y., Kusunoki, S., ... Horie, K. (1995). Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation. Unknown Journal, 19-20.

Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation. / Kuroi, T.; Shimizu, S.; Furukawa, A.; Komori, S.; Kawasaki, Y.; Kusunoki, S.; Okumura, Y.; Inuishi, Masahide; Tsubouchi, N.; Horie, K.

In: Unknown Journal, 1995, p. 19-20.

Research output: Contribution to journalArticle

Kuroi, T, Shimizu, S, Furukawa, A, Komori, S, Kawasaki, Y, Kusunoki, S, Okumura, Y, Inuishi, M, Tsubouchi, N & Horie, K 1995, 'Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation', Unknown Journal, pp. 19-20.
Kuroi, T. ; Shimizu, S. ; Furukawa, A. ; Komori, S. ; Kawasaki, Y. ; Kusunoki, S. ; Okumura, Y. ; Inuishi, Masahide ; Tsubouchi, N. ; Horie, K. / Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation. In: Unknown Journal. 1995 ; pp. 19-20.
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