Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation

T. Kuroi, S. Shimizu, A. Furukawa, S. Komori, Y. Kawasaki, S. Kusunoki, Y. Okumura, M. Inuishi, N. Tsubouchi, K. Horie

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

An advanced nitrogen implantation technique is proposed. New technique can remarkably suppress the hot carrier degradation. Since the generation of interface states can be reduced by the incorporation of nitrogen at the interface between a substrate and SiO2 spacers. Moreover, the ultra shallow junction without the increase in leakage current can be formed by nitrogen implantation into the source/drain. Since the secondary defects induced by nitrogen implantation can act as a surface proximity gettering (SPG) site.

Original languageEnglish
Pages (from-to)19-20
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 1995 Jun 61995 Jun 8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Kuroi, T., Shimizu, S., Furukawa, A., Komori, S., Kawasaki, Y., Kusunoki, S., Okumura, Y., Inuishi, M., Tsubouchi, N., & Horie, K. (1995). Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation. Digest of Technical Papers - Symposium on VLSI Technology, 19-20.