Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation

T. Kuroi, S. Shimizu, A. Furukawa, S. Komori, Y. Kawasaki, S. Kusunoki, Y. Okumura, M. Inuishi, N. Tsubouchi, K. Horie

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13 Citations (Scopus)

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