Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode

A. Tajiri, K. Minakuchi, K. Komeda, Y. Bessho, Y. Inoue, K. Yodoshi, T. Yamaguchi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10-14 Hz-1.

Original languageEnglish
Pages (from-to)369-370
Number of pages2
JournalElectronics Letters
Volume29
Issue number4
Publication statusPublished - 1993 Jan 1
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tajiri, A., Minakuchi, K., Komeda, K., Bessho, Y., Inoue, Y., Yodoshi, K., & Yamaguchi, T. (1993). Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode. Electronics Letters, 29(4), 369-370.