Abstract
A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10-14 Hz-1.
| Original language | English |
|---|---|
| Pages (from-to) | 369-370 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 29 |
| Issue number | 4 |
| Publication status | Published - 1993 Jan 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Tajiri, A., Minakuchi, K., Komeda, K., Bessho, Y., Inoue, Y., Yodoshi, K., & Yamaguchi, T. (1993). Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode. Electronics Letters, 29(4), 369-370.