Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode

A. Tajiri; K. Minakuchi; K. Komeda; Y. Bessho; Y. Inoue; K. Yodoshi; T. Yamaguchi

Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode

A. Tajiri^*, K. Minakuchi, K. Komeda, Y. Bessho, Y. Inoue, K. Yodoshi, T. Yamaguchi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10^-14 Hz^-1.

Original language	English
Pages (from-to)	369-370
Number of pages	2
Journal	Electronics Letters
Volume	29
Issue number	4
Publication status	Published - 1993 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode",

abstract = "A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10-14 Hz-1.",

author = "A. Tajiri and K. Minakuchi and K. Komeda and Y. Bessho and Y. Inoue and K. Yodoshi and T. Yamaguchi",

year = "1993",

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language = "English",

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pages = "369--370",

journal = "Electronics Letters",

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T1 - Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode

AU - Tajiri, A.

AU - Minakuchi, K.

AU - Komeda, K.

AU - Bessho, Y.

AU - Inoue, Y.

AU - Yodoshi, K.

AU - Yamaguchi, T.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10-14 Hz-1.

AB - A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10-14 Hz-1.

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M3 - Article

AN - SCOPUS:0027545774

VL - 29

SP - 369

EP - 370

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 4

ER -

Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode

Abstract

ASJC Scopus subject areas

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