Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode

A. Tajiri*, K. Minakuchi, K. Komeda, Y. Bessho, Y. Inoue, K. Yodoshi, T. Yamaguchi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10-14 Hz-1.

Original languageEnglish
Pages (from-to)369-370
Number of pages2
JournalElectronics Letters
Volume29
Issue number4
Publication statusPublished - 1993 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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