TY - GEN
T1 - Highly reliable and manufacturable in-line wafer-level hermetic packages for RF MEMS variable capacitor
AU - Kojima, Akihiro
AU - Shimooka, Yoshiaki
AU - Sugizaki, Yoshiaki
AU - Endo, Mitsuyoshi
AU - Yamazaki, Hiroaki
AU - Ogawa, Etsuji
AU - Ikehashi, Tamio
AU - Ohguro, Tatsuya
AU - Obata, Susumu
AU - Miyagi, Takeshi
AU - Mori, Ikuo
AU - Toyoshima, Yoshiaki
AU - Shibata, Hideki
PY - 2009/12/11
Y1 - 2009/12/11
N2 - In this paper, we report a thin-film encapsulation technology for wafer-level micro-electro-mechanical systems (MEMS) variable capacitor package. The electrical characteristics of MEMS are adversely affected by moisture. In order to prevent moisture from permeating into a package, the top surface was protected with a plasma-enhanced chemical vapor deposition (PE-CVD) SiN layer. The developed packages become a hybrid thin-film hermetic encapsulation consisting of an internal shell using PE-CVD SiO, a seal layer coating with resin, and an external protective layer formed by PE-CVD SiN. The process is fully compatible with standard low-cost back-end-of-the-line (BEOL) technologies for LSIs as a wafer-level package (WLP). This hybrid structure was very effective for protecting the MEMS device from external moisture. Moreover, the electrode surface area has to be wide, because a wide range of capacities is necessary in MEMS variable capacitors. We have developed a large (1480 × 1080 μm) hermetic thin-film encapsulation as WLP.
AB - In this paper, we report a thin-film encapsulation technology for wafer-level micro-electro-mechanical systems (MEMS) variable capacitor package. The electrical characteristics of MEMS are adversely affected by moisture. In order to prevent moisture from permeating into a package, the top surface was protected with a plasma-enhanced chemical vapor deposition (PE-CVD) SiN layer. The developed packages become a hybrid thin-film hermetic encapsulation consisting of an internal shell using PE-CVD SiO, a seal layer coating with resin, and an external protective layer formed by PE-CVD SiN. The process is fully compatible with standard low-cost back-end-of-the-line (BEOL) technologies for LSIs as a wafer-level package (WLP). This hybrid structure was very effective for protecting the MEMS device from external moisture. Moreover, the electrode surface area has to be wide, because a wide range of capacities is necessary in MEMS variable capacitors. We have developed a large (1480 × 1080 μm) hermetic thin-film encapsulation as WLP.
KW - Hermetic encapsulation
KW - Stiction
KW - Wafer-level package (WLP)
UR - http://www.scopus.com/inward/record.url?scp=71449094013&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71449094013&partnerID=8YFLogxK
U2 - 10.1109/SENSOR.2009.5285778
DO - 10.1109/SENSOR.2009.5285778
M3 - Conference contribution
AN - SCOPUS:71449094013
SN - 9781424441938
T3 - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
SP - 837
EP - 840
BT - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
T2 - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Y2 - 21 June 2009 through 25 June 2009
ER -