Highly reliable buried-stripe type 980 nm laser diodes for practical optical communications

Hideyoshi Horie, Hirotaka Ohta, Yoshitaka Yamamoto, Nobuhiro Arai, Brian Kelly, Toshinari Fujimori, Hideki Gotoh, Masashi Usami, Yuichi Matsushima

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

We have developed high power and highly reliable single-mode 980 nm laser diodes (LDs) as an excitation light source for erbium doped fiber amplifiers (EDFAs) for practical communication usage. We designed buried-stripe type 980 nm LDs with a weakly index guided structure to maintain a stable single transverse mode even in high power output operation. Regarding the typical initial device characteristics, a kink level of 315±15 mW was realized and the devices showed maximum light output powers of over 550 mW at 25 °C and complete thermal rollover characteristics measured at temperatures up to 150 °C with 800 mA current injection. In electrostatic discharge (ESD) tests, no significant change of light output and/or voltage versus current characteristics after forward bias discharges typically up to about +12 kV and reverse up to -30 kV (equipment limitation) was found. Regarding the reliability, we carried out long-term aging tests at 120 mW light output power at 50 °C. In the tests, we confirmed no sudden failure and very stable spectral characteristics. In addition, we obtained similar degradation rates over different device groups. Furthermore, 150-250 mW light output aging tests also showed stable operation. The characteristics of these devices make them suitable for practical communication applications.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages280-292
Number of pages13
Volume3945
Publication statusPublished - 2000
Externally publishedYes
EventLaser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging and Reliability of Semiconductor Laseer V - San Jsoe, CA, USA
Duration: 2000 Jan 252000 Jan 26

Other

OtherLaser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging and Reliability of Semiconductor Laseer V
CitySan Jsoe, CA, USA
Period00/1/2500/1/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • Cite this

    Horie, H., Ohta, H., Yamamoto, Y., Arai, N., Kelly, B., Fujimori, T., Gotoh, H., Usami, M., & Matsushima, Y. (2000). Highly reliable buried-stripe type 980 nm laser diodes for practical optical communications. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3945, pp. 280-292). Society of Photo-Optical Instrumentation Engineers.