HIGHLY RELIABLE N-MOS PROCESS FOR ONE MEGABIT DYNAMIC RANDOM ACCESS MEMORY.

T. Matsukawa*, M. Inuishi, J. Mitsuhashi, M. Hirayama, K. Tsukamoto, S. Uoya, T. Yoshihara, H. Nakata

*Corresponding author for this work

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2 Citations (Scopus)

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