A novel FBC with 25nm-thick BOX (buried oxide) structure has been developed. A feature of new FBC is scalability in the case of thinner SOI, which promises embedded DRAM on SOI in future generations. Using 96Kbit array, the pause time distribution of FBC is demonstrated for the first time. Due to simplified structure, pause time variation of new FBC is significantly suppressed compared with conventional FBC.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2004|
|Event||2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States|
Duration: 2004 Jun 15 → 2004 Jun 17
ASJC Scopus subject areas
- Electrical and Electronic Engineering