Abstract
We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 1012 cm-2, which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.
| Original language | English |
|---|---|
| Article number | 6808407 |
| Journal | IEEE Journal on Selected Topics in Quantum Electronics |
| Volume | 20 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2014 Nov 1 |
| Externally published | Yes |
Fingerprint
Keywords
- Avalanche photodiodes
- optical fiber communications
- photodetectors
- quantum dots (QDs)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
Cite this
Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications. / Umezawa, Toshimasa; Akahane, Kouichi; Yamamoto, Naokatsu; Kanno, Atsushi; Kawanishi, Tetsuya.
In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 20, No. 6, 6808407, 01.11.2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications
AU - Umezawa, Toshimasa
AU - Akahane, Kouichi
AU - Yamamoto, Naokatsu
AU - Kanno, Atsushi
AU - Kawanishi, Tetsuya
PY - 2014/11/1
Y1 - 2014/11/1
N2 - We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 1012 cm-2, which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.
AB - We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 1012 cm-2, which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.
KW - Avalanche photodiodes
KW - optical fiber communications
KW - photodetectors
KW - quantum dots (QDs)
UR - http://www.scopus.com/inward/record.url?scp=84928026695&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84928026695&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2014.2321288
DO - 10.1109/JSTQE.2014.2321288
M3 - Article
VL - 20
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
SN - 1077-260X
IS - 6
M1 - 6808407
ER -