Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications

Toshimasa Umezawa; Kouichi Akahane; Naokatsu Yamamoto; Atsushi Kanno; Tetsuya Kawanishi

doi:10.1109/JSTQE.2014.2321288

Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications

Toshimasa Umezawa, Kouichi Akahane, Naokatsu Yamamoto, Atsushi Kanno, Tetsuya Kawanishi

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 10¹² cm^-2, which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.

Original language	English
Article number	6808407
Pages (from-to)	147-153
Number of pages	7
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	20
Issue number	6
DOIs	https://doi.org/10.1109/JSTQE.2014.2321288
Publication status	Published - 2014 Nov 1
Externally published	Yes

Keywords

Avalanche photodiodes
optical fiber communications
photodetectors
quantum dots (QDs)

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/JSTQE.2014.2321288

Cite this

@article{3f8106ebb77a477ea254ea1a46cb5b0f,

title = "Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications",

abstract = "We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 1012 cm-2, which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.",

keywords = "Avalanche photodiodes, optical fiber communications, photodetectors, quantum dots (QDs)",

author = "Toshimasa Umezawa and Kouichi Akahane and Naokatsu Yamamoto and Atsushi Kanno and Tetsuya Kawanishi",

note = "Publisher Copyright: {\textcopyright} 1995-2012 IEEE.",

year = "2014",

month = nov,

day = "1",

doi = "10.1109/JSTQE.2014.2321288",

language = "English",

volume = "20",

pages = "147--153",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications

AU - Umezawa, Toshimasa

AU - Akahane, Kouichi

AU - Yamamoto, Naokatsu

AU - Kanno, Atsushi

AU - Kawanishi, Tetsuya

PY - 2014/11/1

Y1 - 2014/11/1

N2 - We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 1012 cm-2, which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.

AB - We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 1012 cm-2, which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.

KW - Avalanche photodiodes

KW - optical fiber communications

KW - photodetectors

KW - quantum dots (QDs)

UR - http://www.scopus.com/inward/record.url?scp=84928026695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84928026695&partnerID=8YFLogxK

U2 - 10.1109/JSTQE.2014.2321288

DO - 10.1109/JSTQE.2014.2321288

M3 - Article

AN - SCOPUS:84928026695

VL - 20

SP - 147

EP - 153

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 6

M1 - 6808407

ER -

Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this