Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications

Toshimasa Umezawa, Kouichi Akahane, Naokatsu Yamamoto, Atsushi Kanno, Tetsuya Kawanishi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 1012 cm-2, which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.

Original languageEnglish
Article number6808407
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume20
Issue number6
DOIs
Publication statusPublished - 2014 Nov 1
Externally publishedYes

Fingerprint

Optical fiber communication
Photodetectors
Semiconductor quantum dots
photometers
optical fibers
communication
quantum dots
multiplication
avalanches
Dark currents
Optical properties
dark current
absorptivity
optical properties

Keywords

  • Avalanche photodiodes
  • optical fiber communications
  • photodetectors
  • quantum dots (QDs)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications. / Umezawa, Toshimasa; Akahane, Kouichi; Yamamoto, Naokatsu; Kanno, Atsushi; Kawanishi, Tetsuya.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 20, No. 6, 6808407, 01.11.2014.

Research output: Contribution to journalArticle

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