Abstract
We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 1012 cm-2, which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.
Original language | English |
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Article number | 6808407 |
Journal | IEEE Journal on Selected Topics in Quantum Electronics |
Volume | 20 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2014 Nov 1 |
Externally published | Yes |
Keywords
- Avalanche photodiodes
- optical fiber communications
- photodetectors
- quantum dots (QDs)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics