Highly stacked quantum dot lasers fabricated by a strain-compensation technique

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We fabricated laser diodes containing highly stacked InAs quantum dots using a strain-compensation technique. The quantum dots exhibited laser emissions from 1.47 to 1.7 μm and a high characteristic temperature of 113 K.

Original languageEnglish
Title of host publicationIEEE Photonic Society 24th Annual Meeting, PHO 2011
Pages163-164
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Externally publishedYes
Event24th Annual Meeting on IEEE Photonic Society, PHO 2011 - Arlington, VA, United States
Duration: 2011 Oct 92011 Oct 13

Publication series

NameIEEE Photonic Society 24th Annual Meeting, PHO 2011

Other

Other24th Annual Meeting on IEEE Photonic Society, PHO 2011
CountryUnited States
CityArlington, VA
Period11/10/911/10/13

Keywords

  • molecular beam epitaxy
  • quantum dot
  • semiconductor laser
  • strain compensation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Akahane, K., Yamamoto, N., & Kawanishi, T. (2011). Highly stacked quantum dot lasers fabricated by a strain-compensation technique. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 163-164). [6110476] (IEEE Photonic Society 24th Annual Meeting, PHO 2011). https://doi.org/10.1109/PHO.2011.6110476