High‐Rate Thermal Plasma CVD of SiC

Hideyuki Murakami, TOYONOBU YOSHIDA, KAZUO AKASHI

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Using a hybrid thermal plasma reactor for a new CVD process, thick SiC layers were successfully deposited at a rate of ≅500 μm/h on a graphite substrate from SiCl4 and CH4 under soft vacuum (≅2.7times104 Pa). The process is performed typically under flow rates of SiCl4=1.5 g/min and CH4=300 cm3/min and deposition temperatures of 1000° to 1100°C. The effects of deposition conditions on certain characteristics of the deposited layers were investigated. SEM revealed that the appearance of the deposited layers strongly depended on the substrate position. The prepared layers were dense and nearly stoichiometric β‐SiC with (100) preferred orientation. A new method for measuring substrate temperature is also reported, and growth characteristics are discussed. 1988 The American Ceramic Society

Original languageEnglish
Pages (from-to)423-426
Number of pages4
JournalAdvanced Ceramic Materials
Volume3
Issue number4
DOIs
Publication statusPublished - 1988 Jan 1
Externally publishedYes

Fingerprint

Plasma Gases
Plasma CVD
plasma
Substrates
substrate
Graphite
Chemical vapor deposition
preferred orientation
Flow rate
Vacuum
graphite
ceramics
Plasmas
Temperature
Scanning electron microscopy
temperature
scanning electron microscopy
Hot Temperature
rate

ASJC Scopus subject areas

  • Ceramics and Composites
  • Geology
  • Geochemistry and Petrology
  • Materials Chemistry

Cite this

High‐Rate Thermal Plasma CVD of SiC. / Murakami, Hideyuki; YOSHIDA, TOYONOBU; AKASHI, KAZUO.

In: Advanced Ceramic Materials, Vol. 3, No. 4, 01.01.1988, p. 423-426.

Research output: Contribution to journalArticle

Murakami, Hideyuki ; YOSHIDA, TOYONOBU ; AKASHI, KAZUO. / High‐Rate Thermal Plasma CVD of SiC. In: Advanced Ceramic Materials. 1988 ; Vol. 3, No. 4. pp. 423-426.
@article{7700b663705e41b9a40710f00b238d88,
title = "High‐Rate Thermal Plasma CVD of SiC",
abstract = "Using a hybrid thermal plasma reactor for a new CVD process, thick SiC layers were successfully deposited at a rate of ≅500 μm/h on a graphite substrate from SiCl4 and CH4 under soft vacuum (≅2.7times104 Pa). The process is performed typically under flow rates of SiCl4=1.5 g/min and CH4=300 cm3/min and deposition temperatures of 1000° to 1100°C. The effects of deposition conditions on certain characteristics of the deposited layers were investigated. SEM revealed that the appearance of the deposited layers strongly depended on the substrate position. The prepared layers were dense and nearly stoichiometric β‐SiC with (100) preferred orientation. A new method for measuring substrate temperature is also reported, and growth characteristics are discussed. 1988 The American Ceramic Society",
author = "Hideyuki Murakami and TOYONOBU YOSHIDA and KAZUO AKASHI",
year = "1988",
month = "1",
day = "1",
doi = "10.1111/j.1551-2916.1988.tb00250.x",
language = "English",
volume = "3",
pages = "423--426",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "4",

}

TY - JOUR

T1 - High‐Rate Thermal Plasma CVD of SiC

AU - Murakami, Hideyuki

AU - YOSHIDA, TOYONOBU

AU - AKASHI, KAZUO

PY - 1988/1/1

Y1 - 1988/1/1

N2 - Using a hybrid thermal plasma reactor for a new CVD process, thick SiC layers were successfully deposited at a rate of ≅500 μm/h on a graphite substrate from SiCl4 and CH4 under soft vacuum (≅2.7times104 Pa). The process is performed typically under flow rates of SiCl4=1.5 g/min and CH4=300 cm3/min and deposition temperatures of 1000° to 1100°C. The effects of deposition conditions on certain characteristics of the deposited layers were investigated. SEM revealed that the appearance of the deposited layers strongly depended on the substrate position. The prepared layers were dense and nearly stoichiometric β‐SiC with (100) preferred orientation. A new method for measuring substrate temperature is also reported, and growth characteristics are discussed. 1988 The American Ceramic Society

AB - Using a hybrid thermal plasma reactor for a new CVD process, thick SiC layers were successfully deposited at a rate of ≅500 μm/h on a graphite substrate from SiCl4 and CH4 under soft vacuum (≅2.7times104 Pa). The process is performed typically under flow rates of SiCl4=1.5 g/min and CH4=300 cm3/min and deposition temperatures of 1000° to 1100°C. The effects of deposition conditions on certain characteristics of the deposited layers were investigated. SEM revealed that the appearance of the deposited layers strongly depended on the substrate position. The prepared layers were dense and nearly stoichiometric β‐SiC with (100) preferred orientation. A new method for measuring substrate temperature is also reported, and growth characteristics are discussed. 1988 The American Ceramic Society

UR - http://www.scopus.com/inward/record.url?scp=84985165117&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84985165117&partnerID=8YFLogxK

U2 - 10.1111/j.1551-2916.1988.tb00250.x

DO - 10.1111/j.1551-2916.1988.tb00250.x

M3 - Article

AN - SCOPUS:84985165117

VL - 3

SP - 423

EP - 426

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 4

ER -