HiLerformance P-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface

Kazuyuki Hirama, Kyosuke Tsuge, Syunsuke Sato, Tetsuya Tsuno, Yoshikatsu Jingu, Shintaro Yamauchi, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    40 Citations (Scopus)

    Abstract

    Through the enhancement of hole accumulated density near hydrogen-terminated (111) diamond surfaces, low sheet resistance (̃5 kΩ/sq) has been obtained compared with widely used (001) diamond surfaces (̃10 kΩ/sq). Using the hole accumulation layer channel, a high drain current density of -850mA/mm was obtained in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). This drain current density is the highest value for diamond FETs. The high drain current on the (111) surface is attributed to two factors: The low source and drain resistances owing to the high hole carrier density and the high channel mobility at a high gate-source voltage on the (111) surface.

    Original languageEnglish
    Article number044001
    JournalApplied Physics Express
    Volume3
    Issue number4
    DOIs
    Publication statusPublished - 2010 Apr

    Fingerprint

    MOSFET devices
    metal oxide semiconductors
    Diamonds
    Drain current
    field effect transistors
    diamonds
    high current
    Current density
    current density
    Sheet resistance
    Field effect transistors
    Carrier concentration
    Hydrogen
    augmentation
    Electric potential
    electric potential
    hydrogen

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    HiLerformance P-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface. / Hirama, Kazuyuki; Tsuge, Kyosuke; Sato, Syunsuke; Tsuno, Tetsuya; Jingu, Yoshikatsu; Yamauchi, Shintaro; Kawarada, Hiroshi.

    In: Applied Physics Express, Vol. 3, No. 4, 044001, 04.2010.

    Research output: Contribution to journalArticle

    Hirama, Kazuyuki ; Tsuge, Kyosuke ; Sato, Syunsuke ; Tsuno, Tetsuya ; Jingu, Yoshikatsu ; Yamauchi, Shintaro ; Kawarada, Hiroshi. / HiLerformance P-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface. In: Applied Physics Express. 2010 ; Vol. 3, No. 4.
    @article{e4ec57431ec6452e807b13c6c3cfc301,
    title = "HiLerformance P-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface",
    abstract = "Through the enhancement of hole accumulated density near hydrogen-terminated (111) diamond surfaces, low sheet resistance (̃5 kΩ/sq) has been obtained compared with widely used (001) diamond surfaces (̃10 kΩ/sq). Using the hole accumulation layer channel, a high drain current density of -850mA/mm was obtained in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). This drain current density is the highest value for diamond FETs. The high drain current on the (111) surface is attributed to two factors: The low source and drain resistances owing to the high hole carrier density and the high channel mobility at a high gate-source voltage on the (111) surface.",
    author = "Kazuyuki Hirama and Kyosuke Tsuge and Syunsuke Sato and Tetsuya Tsuno and Yoshikatsu Jingu and Shintaro Yamauchi and Hiroshi Kawarada",
    year = "2010",
    month = "4",
    doi = "10.1143/APEX.3.044001",
    language = "English",
    volume = "3",
    journal = "Applied Physics Express",
    issn = "1882-0778",
    publisher = "Japan Society of Applied Physics",
    number = "4",

    }

    TY - JOUR

    T1 - HiLerformance P-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface

    AU - Hirama, Kazuyuki

    AU - Tsuge, Kyosuke

    AU - Sato, Syunsuke

    AU - Tsuno, Tetsuya

    AU - Jingu, Yoshikatsu

    AU - Yamauchi, Shintaro

    AU - Kawarada, Hiroshi

    PY - 2010/4

    Y1 - 2010/4

    N2 - Through the enhancement of hole accumulated density near hydrogen-terminated (111) diamond surfaces, low sheet resistance (̃5 kΩ/sq) has been obtained compared with widely used (001) diamond surfaces (̃10 kΩ/sq). Using the hole accumulation layer channel, a high drain current density of -850mA/mm was obtained in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). This drain current density is the highest value for diamond FETs. The high drain current on the (111) surface is attributed to two factors: The low source and drain resistances owing to the high hole carrier density and the high channel mobility at a high gate-source voltage on the (111) surface.

    AB - Through the enhancement of hole accumulated density near hydrogen-terminated (111) diamond surfaces, low sheet resistance (̃5 kΩ/sq) has been obtained compared with widely used (001) diamond surfaces (̃10 kΩ/sq). Using the hole accumulation layer channel, a high drain current density of -850mA/mm was obtained in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). This drain current density is the highest value for diamond FETs. The high drain current on the (111) surface is attributed to two factors: The low source and drain resistances owing to the high hole carrier density and the high channel mobility at a high gate-source voltage on the (111) surface.

    UR - http://www.scopus.com/inward/record.url?scp=77950652081&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77950652081&partnerID=8YFLogxK

    U2 - 10.1143/APEX.3.044001

    DO - 10.1143/APEX.3.044001

    M3 - Article

    VL - 3

    JO - Applied Physics Express

    JF - Applied Physics Express

    SN - 1882-0778

    IS - 4

    M1 - 044001

    ER -