Hole accumulation in (In)GaSb/AlSb quantum wells induced by the Fermi-level pinning of an InAs surface

Toshiki Makimoto, Berinder Brar, Herbert Kroemer

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrate hole accumulation in unintentionally doped (In)GaSb/AlSb quantum wells, using an InAs surface as a cap layer. From the hole concentrations in quantum wells, the energy difference between the conduction band edge of InAs and the valence band edge of GaSb is estimated. Relatively high two-dimensional hole mobilities of 650 and 7000 cm2/V · s are obtained from Hall measurements at 300 and 77 K. For a strained InGaSb/AlSb quantum well, mobility enhancement is observed.

Original languageEnglish
Pages (from-to)883-886
Number of pages4
JournalJournal of Crystal Growth
Volume150
Issue number1 -4 pt 2
Publication statusPublished - 1995 May 1
Externally publishedYes

Fingerprint

Fermi level
Semiconductor quantum wells
quantum wells
Hole concentration
Hole mobility
hole mobility
Valence bands
Conduction bands
caps
conduction bands
valence
augmentation
indium arsenide
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Hole accumulation in (In)GaSb/AlSb quantum wells induced by the Fermi-level pinning of an InAs surface. / Makimoto, Toshiki; Brar, Berinder; Kroemer, Herbert.

In: Journal of Crystal Growth, Vol. 150, No. 1 -4 pt 2, 01.05.1995, p. 883-886.

Research output: Contribution to journalArticle

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