Hole accumulation in (In)GaSb/AlSb quantum wells induced by the Fermi-level pinning of an InAs surface

Toshiki Makimoto, Berinder Brar, Herbert Kroemer

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We demonstrate hole accumulation in unintentionally doped (In)GaSb/AlSb quantum wells, using an InAs surface as a cap layer. From the hole concentrations in quantum wells, the energy difference between the conduction band edge of InAs and the valence band edge of GaSb is estimated. Relatively high two-dimensional hole mobilities of 650 and 7000 cm2/V · s are obtained from Hall measurements at 300 and 77 K. For a strained InGaSb/AlSb quantum well, mobility enhancement is observed.

Original languageEnglish
Pages (from-to)883-886
Number of pages4
JournalJournal of Crystal Growth
Publication statusPublished - 1995 Jan 1


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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