Hole-doping-induced changes in the electronic structure of La 1-xSr x-FeO 3: Soft x-ray photoemission and absorption study of epitaxial thin films

H. Wadati*, D. Kobayashi, H. Kumigashira, K. Okazaki, T. Mizokawa, A. Fujimori, K. Horiba, M. Oshima, N. Hamada, M. Lippmaa, M. Kawasaki, H. Koinuma

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

102 Citations (Scopus)

Abstract

We have studied the electronic structure of epitaxially grown thin films of La 1-xSr xFeO 3 by in situ photoemission spectroscopy (PES) and x-ray-absorption spectroscopy (XAS) measurements. The Fe 2p and valence-band PES spectra and the O 1s XAS spectra of LaFeO 3 have been successfully reproduced by configuration-interaction cluster-model calculation and, except for the satellite structure, by band-structure calculation. From the shift of the binding energies of core levels, the chemical potential was found to be shifted downward as x was increased. Among the three peaks in the valence-band spectra of La 1-xSr xFeO 3, the peak nearest to the Fermi level (E F), due to the "e g band," was found to move toward E F and became weaker as x was increased, whereas the intensity of the peak just above E F in the O 1s XAS spectra increased with x. The gap at E F was seen for all values of x. These results indicate that changes in the spectral line shape around E F are dominated by spectral weight transfer from below to above EF across the gap and are therefore highly nonrigid-bandlike changes.

Original languageEnglish
Article number035108
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number3
DOIs
Publication statusPublished - 2005 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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