Hole mobility enhancement and p-doping in monolayer WSe<inf>2</inf> by gold decoration

Chang Hsiao Chen, Chun Lan Wu, Jiang Pu, Ming Hui Chiu, Pushpendra Kumar, Taishi Takenobu, Lain Jong Li

    Research output: Contribution to journalArticle

    75 Citations (Scopus)

    Abstract

    Tungsten diselenide (WSe<inf>2</inf>) is an attractive transition metal dichalcogenide material, since its Fermi energy close to the mid gap makes it an excellent candidate for realizing p-n junction devices and complementary digital logic applications. Doping is one of the most important technologies for controlling the Fermi energy in semiconductors, including 2D materials. Here we present a simple, stable and controllable p-doping technique on a WSe<inf>2</inf> monolayer, where a more p-typed WSe<inf>2</inf> field effect transistor is realized by electron transfer from the WSe<inf>2</inf> to the gold (Au) decorated on the WSe<inf>2</inf> surfaces. Related changes in Raman spectroscopy are also reported. The p-doping caused by Au on WSe<inf>2</inf> monolayers lowers the channel resistance by orders of magnitude. The effective hole mobility is ∼100 (cm<sup>2</sup>/Vs) and the near ideal subthreshold swing of ∼60mV/decade and high on/off current ratio of >106 are observed. The Au deposited on the WSe<inf>2</inf> also serves as a protection layer to prevent a reaction between the WSe<inf>2</inf> and the environment, making the doping stable and promising for future scalable fabrication.

    Original languageEnglish
    Article number034001
    Journal2D Materials
    Volume1
    Issue number3
    DOIs
    Publication statusPublished - 2014 Dec 1

    Fingerprint

    Hole mobility
    hole mobility
    Gold
    Monolayers
    Doping (additives)
    gold
    augmentation
    Fermi level
    Tungsten
    Field effect transistors
    p-n junctions
    Transition metals
    logic
    Raman spectroscopy
    electron transfer
    tungsten
    field effect transistors
    transition metals
    Semiconductor materials
    Fabrication

    Keywords

    • doping
    • transition metal dichalcogenide
    • WSe<inf>2</inf>

    ASJC Scopus subject areas

    • Mechanics of Materials
    • Mechanical Engineering
    • Materials Science(all)
    • Chemistry(all)
    • Condensed Matter Physics

    Cite this

    Chen, C. H., Wu, C. L., Pu, J., Chiu, M. H., Kumar, P., Takenobu, T., & Li, L. J. (2014). Hole mobility enhancement and p-doping in monolayer WSe<inf>2</inf> by gold decoration. 2D Materials, 1(3), [034001]. https://doi.org/10.1088/2053-1583/1/3/034001

    Hole mobility enhancement and p-doping in monolayer WSe<inf>2</inf> by gold decoration. / Chen, Chang Hsiao; Wu, Chun Lan; Pu, Jiang; Chiu, Ming Hui; Kumar, Pushpendra; Takenobu, Taishi; Li, Lain Jong.

    In: 2D Materials, Vol. 1, No. 3, 034001, 01.12.2014.

    Research output: Contribution to journalArticle

    Chen, CH, Wu, CL, Pu, J, Chiu, MH, Kumar, P, Takenobu, T & Li, LJ 2014, 'Hole mobility enhancement and p-doping in monolayer WSe<inf>2</inf> by gold decoration', 2D Materials, vol. 1, no. 3, 034001. https://doi.org/10.1088/2053-1583/1/3/034001
    Chen, Chang Hsiao ; Wu, Chun Lan ; Pu, Jiang ; Chiu, Ming Hui ; Kumar, Pushpendra ; Takenobu, Taishi ; Li, Lain Jong. / Hole mobility enhancement and p-doping in monolayer WSe<inf>2</inf> by gold decoration. In: 2D Materials. 2014 ; Vol. 1, No. 3.
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