Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors

Kyozaburo Takeda, Nobuo Matsumoto, Akihito Taguchi, Hiroyuki Taki, Eiji Ohta, Makoto Sakata

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

With the use of the substitutional virtual-crystal-approximation method, the composition dependence is semiempirically estimated for the GaAs1-xPx valence-band parameter and the hole-phonon coupling constants. Alloy scattering is also investigated with the help of dielectric band theory. Taking account of the inter-valence-band interaction, we discuss theoretical hole mobility using two different approaches: the conventional effective-relaxation-time approximation and Rodes difference approximation. Owing to decreased split-off energy, the influence of inter-valence-band interaction on the hole material parameter is strengthened with increased P content and temperature.

Original languageEnglish
Pages (from-to)1101-1111
Number of pages11
JournalPhysical Review B
Volume32
Issue number2
DOIs
Publication statusPublished - 1985 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Takeda, K., Matsumoto, N., Taguchi, A., Taki, H., Ohta, E., & Sakata, M. (1985). Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors. Physical Review B, 32(2), 1101-1111. https://doi.org/10.1103/PhysRevB.32.1101