Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors

Kyozaburo Takeda, Nobuo Matsumoto, Akihito Taguchi, Hiroyuki Taki, Eiji Ohta, Makoto Sakata

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

With the use of the substitutional virtual-crystal-approximation method, the composition dependence is semiempirically estimated for the GaAs1-xPx valence-band parameter and the hole-phonon coupling constants. Alloy scattering is also investigated with the help of dielectric band theory. Taking account of the inter-valence-band interaction, we discuss theoretical hole mobility using two different approaches: the conventional effective-relaxation-time approximation and Rodes difference approximation. Owing to decreased split-off energy, the influence of inter-valence-band interaction on the hole material parameter is strengthened with increased P content and temperature.

Original languageEnglish
Pages (from-to)1101-1111
Number of pages11
JournalPhysical Review B
Volume32
Issue number2
DOIs
Publication statusPublished - 1985
Externally publishedYes

Fingerprint

Hole mobility
hole mobility
Valence bands
Semiconductor materials
valence
approximation
Relaxation time
Scattering
Crystals
relaxation time
interactions
Chemical analysis
gallium arsenide
scattering
crystals
Temperature
temperature
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Takeda, K., Matsumoto, N., Taguchi, A., Taki, H., Ohta, E., & Sakata, M. (1985). Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors. Physical Review B, 32(2), 1101-1111. https://doi.org/10.1103/PhysRevB.32.1101

Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors. / Takeda, Kyozaburo; Matsumoto, Nobuo; Taguchi, Akihito; Taki, Hiroyuki; Ohta, Eiji; Sakata, Makoto.

In: Physical Review B, Vol. 32, No. 2, 1985, p. 1101-1111.

Research output: Contribution to journalArticle

Takeda, K, Matsumoto, N, Taguchi, A, Taki, H, Ohta, E & Sakata, M 1985, 'Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors', Physical Review B, vol. 32, no. 2, pp. 1101-1111. https://doi.org/10.1103/PhysRevB.32.1101
Takeda, Kyozaburo ; Matsumoto, Nobuo ; Taguchi, Akihito ; Taki, Hiroyuki ; Ohta, Eiji ; Sakata, Makoto. / Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors. In: Physical Review B. 1985 ; Vol. 32, No. 2. pp. 1101-1111.
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