Hole multiplication in a reverse-type avalanche photodiode

Mitsuhiro Sato, Takayuki Yanagida, Akira Yoshikawa, Yoichi Yatsu, Jun Kataoka, Fumio Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reports on hole multiplication processes, detected in a reverse-type avalanche photodiode (APD), Hamamatsu Photonics type S8664-55, which has a light sensitive area of 5 × 5 mm and a depletion layer thickness of ∼ 40 μm. When the APD was irradiated from a Am isotope, the 13.9 keV and 17.6 keV X-rays produced spectral peaks, whose pulse height depended strongly on the bias voltage, whereas 57.5 keV photons produced another peak, whose the pulse height was much less bias sensitive. The former are identified with electron multiplication signals, whereas the latter with those due to hole multiplication. By measuring the electron and hole multiplication gains as a function of the bias voltage, the ratio of hole and electron ionization probabilities was determined as 0.0130 ± 0.0010 at 20 °C, and 0.0153 ±0.0010 at -20 °C.

Original languageEnglish
Title of host publicationIEEE Nuclear Science Symposium Conference Record
Pages1486-1490
Number of pages5
Volume2
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC - Honolulu, HI
Duration: 2007 Oct 272007 Nov 3

Other

Other2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
CityHonolulu, HI
Period07/10/2707/11/3

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ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Industrial and Manufacturing Engineering

Cite this

Sato, M., Yanagida, T., Yoshikawa, A., Yatsu, Y., Kataoka, J., & Saito, F. (2007). Hole multiplication in a reverse-type avalanche photodiode. In IEEE Nuclear Science Symposium Conference Record (Vol. 2, pp. 1486-1490). [4437280] https://doi.org/10.1109/NSSMIC.2007.4437280