Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface

M. Kobayashi, K. Wakao, S. Nakamura, A. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

ZnSe substrate surfaces were treated by the citric acid-based etchant. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve and transmission electron microscopy observations. The electrical properties of the n-ZnSe/n-ZnSe interface prepared using this etchant was studied, and the C-V measurement showed that a good electrical interface was formed.

Original languageEnglish
Pages (from-to)474-476
Number of pages3
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - 1999 May
Externally publishedYes
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 1998 Aug 311998 Sep 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Kobayashi, M., Wakao, K., Nakamura, S., Jia, A., Yoshikawa, A., Shimotomai, M., Kato, Y., & Takahashi, K. (1999). Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface. Journal of Crystal Growth, 201, 474-476. https://doi.org/10.1016/S0022-0248(98)01379-7