Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface

Masakazu Kobayashi, K. Wakao, S. Nakamura, A. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

ZnSe substrate surfaces were treated by the citric acid-based etchant. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve and transmission electron microscopy observations. The electrical properties of the n-ZnSe/n-ZnSe interface prepared using this etchant was studied, and the C-V measurement showed that a good electrical interface was formed.

Original languageEnglish
Pages (from-to)474-476
Number of pages3
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - 1999 May
Externally publishedYes

Fingerprint

etchants
citric acid
Citric acid
Molecular beam epitaxy
Citric Acid
Etching
Electric properties
Transmission electron microscopy
X rays
Substrates
electrical properties
etching
transmission electron microscopy
curves
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Kobayashi, M., Wakao, K., Nakamura, S., Jia, A., Yoshikawa, A., Shimotomai, M., ... Takahashi, K. (1999). Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface. Journal of Crystal Growth, 201, 474-476. https://doi.org/10.1016/S0022-0248(98)01379-7

Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface. / Kobayashi, Masakazu; Wakao, K.; Nakamura, S.; Jia, A.; Yoshikawa, A.; Shimotomai, M.; Kato, Y.; Takahashi, K.

In: Journal of Crystal Growth, Vol. 201, 05.1999, p. 474-476.

Research output: Contribution to journalArticle

Kobayashi, M, Wakao, K, Nakamura, S, Jia, A, Yoshikawa, A, Shimotomai, M, Kato, Y & Takahashi, K 1999, 'Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface', Journal of Crystal Growth, vol. 201, pp. 474-476. https://doi.org/10.1016/S0022-0248(98)01379-7
Kobayashi, Masakazu ; Wakao, K. ; Nakamura, S. ; Jia, A. ; Yoshikawa, A. ; Shimotomai, M. ; Kato, Y. ; Takahashi, K. / Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface. In: Journal of Crystal Growth. 1999 ; Vol. 201. pp. 474-476.
@article{b5420b68d14d4f39b3265ca17352a668,
title = "Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface",
abstract = "ZnSe substrate surfaces were treated by the citric acid-based etchant. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve and transmission electron microscopy observations. The electrical properties of the n-ZnSe/n-ZnSe interface prepared using this etchant was studied, and the C-V measurement showed that a good electrical interface was formed.",
author = "Masakazu Kobayashi and K. Wakao and S. Nakamura and A. Jia and A. Yoshikawa and M. Shimotomai and Y. Kato and K. Takahashi",
year = "1999",
month = "5",
doi = "10.1016/S0022-0248(98)01379-7",
language = "English",
volume = "201",
pages = "474--476",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface

AU - Kobayashi, Masakazu

AU - Wakao, K.

AU - Nakamura, S.

AU - Jia, A.

AU - Yoshikawa, A.

AU - Shimotomai, M.

AU - Kato, Y.

AU - Takahashi, K.

PY - 1999/5

Y1 - 1999/5

N2 - ZnSe substrate surfaces were treated by the citric acid-based etchant. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve and transmission electron microscopy observations. The electrical properties of the n-ZnSe/n-ZnSe interface prepared using this etchant was studied, and the C-V measurement showed that a good electrical interface was formed.

AB - ZnSe substrate surfaces were treated by the citric acid-based etchant. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve and transmission electron microscopy observations. The electrical properties of the n-ZnSe/n-ZnSe interface prepared using this etchant was studied, and the C-V measurement showed that a good electrical interface was formed.

UR - http://www.scopus.com/inward/record.url?scp=0032683568&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032683568&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)01379-7

DO - 10.1016/S0022-0248(98)01379-7

M3 - Article

VL - 201

SP - 474

EP - 476

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -