Hot carrier effect of AC stress on P-MOSFETs

S. Shimizu, S. Kusunoki, Masahide Inuishi, K. Tsukamoto, Y. Akasaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The hot carrier degradation under the AC stress was compared with that under the DC stress for the surface channel P-MOSFETs having 0.5μm gate length and 10mm gate oxide. The shift direction of drain current and threshold voltage becomes positive by the Drain Avalanche Hot Electron (DAHE) injection as the gate pulse voltage approaches the gate voltage with the maximum gate current and the shift direction gets negative by the Channel Hot Hole (CHH) injection as the gate pulse approaches the drain voltage. Moreover the shift direction depends not only on the pulse height but also on the rise/fall time as well as the frequency of the gate pulse as the peak voltage approaches the drain voltage since the ratio of the CHH injection time to the DAHE injection time is varied by these parameters.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherPubl by Business Cent for Acad Soc Japan
Pages231-233
Number of pages3
Publication statusPublished - 1991
Externally publishedYes
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

Fingerprint

Hot carriers
Electric potential
Electron injection
Hot electrons
Drain current
Threshold voltage
Laser pulses
Degradation
Oxides

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Shimizu, S., Kusunoki, S., Inuishi, M., Tsukamoto, K., & Akasaka, Y. (1991). Hot carrier effect of AC stress on P-MOSFETs. In Conference on Solid State Devices and Materials (pp. 231-233). Publ by Business Cent for Acad Soc Japan.

Hot carrier effect of AC stress on P-MOSFETs. / Shimizu, S.; Kusunoki, S.; Inuishi, Masahide; Tsukamoto, K.; Akasaka, Y.

Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, 1991. p. 231-233.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shimizu, S, Kusunoki, S, Inuishi, M, Tsukamoto, K & Akasaka, Y 1991, Hot carrier effect of AC stress on P-MOSFETs. in Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, pp. 231-233, 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, 91/8/27.
Shimizu S, Kusunoki S, Inuishi M, Tsukamoto K, Akasaka Y. Hot carrier effect of AC stress on P-MOSFETs. In Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan. 1991. p. 231-233
Shimizu, S. ; Kusunoki, S. ; Inuishi, Masahide ; Tsukamoto, K. ; Akasaka, Y. / Hot carrier effect of AC stress on P-MOSFETs. Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, 1991. pp. 231-233
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