Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs

S. Kusunoki, Masahide Inuishi, T. Yamaguchi, K. Tsukamoto, Y. Akasaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


The authors have proposed a novel structure which satisfies both high performance and high reliability with re-oxidized nitrided oxide (RNO) film in the sidewall of the LDD (lightly doped drain) transistor using rapid thermal nitridation (RTN). With this structure, the hot-carrier resistance of the LDD can be improved without the degradation of mobility as seen in MOSFETs having the RNO film as a gate insulator. Hot-carrier resistance against drain avalanche hot carrier injection is improved without degrading the resistance against channel-hot-electron injection or the mobility. Moreover, the authors have studied the nature of the RNO films in contrast to oxide films from the viewpoint of hot-carrier resistance.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780302435
Publication statusPublished - 1991
Externally publishedYes
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 1991 Dec 81991 Dec 11


OtherInternational Electron Devices Meeting, IEDM 1991
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry


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