Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs

S. Kusunoki, Masahide Inuishi, T. Yamaguchi, K. Tsukamoto, Y. Akasaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The authors have proposed a novel structure which satisfies both high performance and high reliability with re-oxidized nitrided oxide (RNO) film in the sidewall of the LDD (lightly doped drain) transistor using rapid thermal nitridation (RTN). With this structure, the hot-carrier resistance of the LDD can be improved without the degradation of mobility as seen in MOSFETs having the RNO film as a gate insulator. Hot-carrier resistance against drain avalanche hot carrier injection is improved without degrading the resistance against channel-hot-electron injection or the mobility. Moreover, the authors have studied the nature of the RNO films in contrast to oxide films from the viewpoint of hot-carrier resistance.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages649-652
Number of pages4
Volume1991-January
ISBN (Electronic)0780302435
DOIs
Publication statusPublished - 1991
Externally publishedYes
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 1991 Dec 81991 Dec 11

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period91/12/891/12/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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    Kusunoki, S., Inuishi, M., Yamaguchi, T., Tsukamoto, K., & Akasaka, Y. (1991). Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs. In International Electron Devices Meeting 1991, IEDM 1991 (Vol. 1991-January, pp. 649-652). [235388] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235388