Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs

S. Kusunoki; Masahide Inuishi; T. Yamaguchi; K. Tsukamoto; Y. Akasaka

doi:10.1109/IEDM.1991.235388

Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs

S. Kusunoki, Masahide Inuishi, T. Yamaguchi, K. Tsukamoto, Y. Akasaka

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

The authors have proposed a novel structure which satisfies both high performance and high reliability with re-oxidized nitrided oxide (RNO) film in the sidewall of the LDD (lightly doped drain) transistor using rapid thermal nitridation (RTN). With this structure, the hot-carrier resistance of the LDD can be improved without the degradation of mobility as seen in MOSFETs having the RNO film as a gate insulator. Hot-carrier resistance against drain avalanche hot carrier injection is improved without degrading the resistance against channel-hot-electron injection or the mobility. Moreover, the authors have studied the nature of the RNO films in contrast to oxide films from the viewpoint of hot-carrier resistance.

Original language	English
Title of host publication	International Electron Devices Meeting 1991, IEDM 1991
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	649-652
Number of pages	4
Volume	1991-January
ISBN (Electronic)	0780302435
DOIs	https://doi.org/10.1109/IEDM.1991.235388
Publication status	Published - 1991
Externally published	Yes
Event	International Electron Devices Meeting, IEDM 1991 - Washington, United States Duration: 1991 Dec 8 → 1991 Dec 11

Other

Other	International Electron Devices Meeting, IEDM 1991
Country/Territory	United States
City	Washington
Period	91/12/8 → 91/12/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

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10.1109/IEDM.1991.235388

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Kusunoki, S., Inuishi, M., Yamaguchi, T., Tsukamoto, K., & Akasaka, Y. (1991). Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs. In International Electron Devices Meeting 1991, IEDM 1991 (Vol. 1991-January, pp. 649-652). [235388] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235388

Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs. / Kusunoki, S.; Inuishi, Masahide; Yamaguchi, T. et al.

International Electron Devices Meeting 1991, IEDM 1991. Vol. 1991-January Institute of Electrical and Electronics Engineers Inc., 1991. p. 649-652 235388.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kusunoki, S, Inuishi, M, Yamaguchi, T, Tsukamoto, K & Akasaka, Y 1991, Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs. in International Electron Devices Meeting 1991, IEDM 1991. vol. 1991-January, 235388, Institute of Electrical and Electronics Engineers Inc., pp. 649-652, International Electron Devices Meeting, IEDM 1991, Washington, United States, 91/12/8. https://doi.org/10.1109/IEDM.1991.235388

Kusunoki S, Inuishi M, Yamaguchi T, Tsukamoto K, Akasaka Y. Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs. In International Electron Devices Meeting 1991, IEDM 1991. Vol. 1991-January. Institute of Electrical and Electronics Engineers Inc. 1991. p. 649-652. 235388 doi: 10.1109/IEDM.1991.235388

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abstract = "The authors have proposed a novel structure which satisfies both high performance and high reliability with re-oxidized nitrided oxide (RNO) film in the sidewall of the LDD (lightly doped drain) transistor using rapid thermal nitridation (RTN). With this structure, the hot-carrier resistance of the LDD can be improved without the degradation of mobility as seen in MOSFETs having the RNO film as a gate insulator. Hot-carrier resistance against drain avalanche hot carrier injection is improved without degrading the resistance against channel-hot-electron injection or the mobility. Moreover, the authors have studied the nature of the RNO films in contrast to oxide films from the viewpoint of hot-carrier resistance.",

author = "S. Kusunoki and Masahide Inuishi and T. Yamaguchi and K. Tsukamoto and Y. Akasaka",

year = "1991",

doi = "10.1109/IEDM.1991.235388",

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AB - The authors have proposed a novel structure which satisfies both high performance and high reliability with re-oxidized nitrided oxide (RNO) film in the sidewall of the LDD (lightly doped drain) transistor using rapid thermal nitridation (RTN). With this structure, the hot-carrier resistance of the LDD can be improved without the degradation of mobility as seen in MOSFETs having the RNO film as a gate insulator. Hot-carrier resistance against drain avalanche hot carrier injection is improved without degrading the resistance against channel-hot-electron injection or the mobility. Moreover, the authors have studied the nature of the RNO films in contrast to oxide films from the viewpoint of hot-carrier resistance.

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Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs

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