Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs

S. Kusunoki, Masahide Inuishi, T. Yamaguchi, K. Tsukamoto, Y. Akasaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The authors have proposed a novel structure which satisfies both high performance and high reliability with re-oxidized nitrided oxide (RNO) film in the sidewall of the LDD (lightly doped drain) transistor using rapid thermal nitridation (RTN). With this structure, the hot-carrier resistance of the LDD can be improved without the degradation of mobility as seen in MOSFETs having the RNO film as a gate insulator. Hot-carrier resistance against drain avalanche hot carrier injection is improved without degrading the resistance against channel-hot-electron injection or the mobility. Moreover, the authors have studied the nature of the RNO films in contrast to oxide films from the viewpoint of hot-carrier resistance.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages649-652
Number of pages4
Volume1991-January
ISBN (Electronic)0780302435
DOIs
Publication statusPublished - 1991
Externally publishedYes
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 1991 Dec 81991 Dec 11

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period91/12/891/12/11

Fingerprint

Hot carriers
Oxides
Oxide films
oxide films
field effect transistors
oxides
Electron injection
Nitridation
Hot electrons
carrier injection
hot electrons
avalanches
Transistors
transistors
insulators
injection
degradation
Degradation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Kusunoki, S., Inuishi, M., Yamaguchi, T., Tsukamoto, K., & Akasaka, Y. (1991). Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs. In International Electron Devices Meeting 1991, IEDM 1991 (Vol. 1991-January, pp. 649-652). [235388] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235388

Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs. / Kusunoki, S.; Inuishi, Masahide; Yamaguchi, T.; Tsukamoto, K.; Akasaka, Y.

International Electron Devices Meeting 1991, IEDM 1991. Vol. 1991-January Institute of Electrical and Electronics Engineers Inc., 1991. p. 649-652 235388.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kusunoki, S, Inuishi, M, Yamaguchi, T, Tsukamoto, K & Akasaka, Y 1991, Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs. in International Electron Devices Meeting 1991, IEDM 1991. vol. 1991-January, 235388, Institute of Electrical and Electronics Engineers Inc., pp. 649-652, International Electron Devices Meeting, IEDM 1991, Washington, United States, 91/12/8. https://doi.org/10.1109/IEDM.1991.235388
Kusunoki S, Inuishi M, Yamaguchi T, Tsukamoto K, Akasaka Y. Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs. In International Electron Devices Meeting 1991, IEDM 1991. Vol. 1991-January. Institute of Electrical and Electronics Engineers Inc. 1991. p. 649-652. 235388 https://doi.org/10.1109/IEDM.1991.235388
Kusunoki, S. ; Inuishi, Masahide ; Yamaguchi, T. ; Tsukamoto, K. ; Akasaka, Y. / Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs. International Electron Devices Meeting 1991, IEDM 1991. Vol. 1991-January Institute of Electrical and Electronics Engineers Inc., 1991. pp. 649-652
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