Abstract
Ion implantation of phosphorus (P) into 4H-SiC at room temperature and 500 °C was investigated. The P profiles simulated with a TRIM (transport of ions in matter) program showed good agreement with experimental results. The sheet resistance (R s) of implanted layers at both temperatures decreased with increases in the annealing temperature between 1200 °C and 1600 °C. Also, in the case of the implanted layer at 500 °C, a low sheet resistance of 71 Ω/□ was obtained by annealing at 1600 °C. Hot-implantation was found to greatly improve the carrier concentration obtained by Hall-effect measurements. In the case of annealing at 1700 °C, the R s of implanted layers at both temperatures increased sharply. From AFM analysis, it is thought that the increase in R s is due to the sublimation or evaporation of SiC from the surface of the implanted layer.
Original language | English |
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Title of host publication | Materials Science Forum |
Publisher | Trans Tech Publ Ltd |
Volume | 338 |
Publication status | Published - 2000 |
Externally published | Yes |
Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 1999 Oct 10 → 1999 Oct 15 |
Other
Other | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials |
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City | Research Triangle Park, NC, USA |
Period | 99/10/10 → 99/10/15 |
ASJC Scopus subject areas
- Materials Science(all)