Abstract
Ion implantation of phosphorus (P) into 4H-SiC at room temperature and 500 °C was investigated. The P profiles simulated with a TRIM (transport of ions in matter) program showed good agreement with experimental results. The sheet resistance (R s) of implanted layers at both temperatures decreased with increases in the annealing temperature between 1200 °C and 1600 °C. Also, in the case of the implanted layer at 500 °C, a low sheet resistance of 71 Ω/□ was obtained by annealing at 1600 °C. Hot-implantation was found to greatly improve the carrier concentration obtained by Hall-effect measurements. In the case of annealing at 1700 °C, the R s of implanted layers at both temperatures increased sharply. From AFM analysis, it is thought that the increase in R s is due to the sublimation or evaporation of SiC from the surface of the implanted layer.
| Original language | English |
|---|---|
| Title of host publication | Materials Science Forum |
| Publisher | Trans Tech Publ Ltd |
| Volume | 338 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 1999 Oct 10 → 1999 Oct 15 |
Other
| Other | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials |
|---|---|
| City | Research Triangle Park, NC, USA |
| Period | 99/10/10 → 99/10/15 |
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ASJC Scopus subject areas
- Materials Science(all)
Cite this
Hot-implantation of phosphorus ions into 4H-SiC. / Imai, Seiji; Kobayashi, Setsuko; Shinohe, Takashi; Fukuda, Kenji; Tanaka, Yasunori; Senzaki, Junji; Tanoue, Hisao; Kobayashi, Naoto; Okushi, Hideyo.
Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Hot-implantation of phosphorus ions into 4H-SiC
AU - Imai, Seiji
AU - Kobayashi, Setsuko
AU - Shinohe, Takashi
AU - Fukuda, Kenji
AU - Tanaka, Yasunori
AU - Senzaki, Junji
AU - Tanoue, Hisao
AU - Kobayashi, Naoto
AU - Okushi, Hideyo
PY - 2000
Y1 - 2000
N2 - Ion implantation of phosphorus (P) into 4H-SiC at room temperature and 500 °C was investigated. The P profiles simulated with a TRIM (transport of ions in matter) program showed good agreement with experimental results. The sheet resistance (R s) of implanted layers at both temperatures decreased with increases in the annealing temperature between 1200 °C and 1600 °C. Also, in the case of the implanted layer at 500 °C, a low sheet resistance of 71 Ω/□ was obtained by annealing at 1600 °C. Hot-implantation was found to greatly improve the carrier concentration obtained by Hall-effect measurements. In the case of annealing at 1700 °C, the R s of implanted layers at both temperatures increased sharply. From AFM analysis, it is thought that the increase in R s is due to the sublimation or evaporation of SiC from the surface of the implanted layer.
AB - Ion implantation of phosphorus (P) into 4H-SiC at room temperature and 500 °C was investigated. The P profiles simulated with a TRIM (transport of ions in matter) program showed good agreement with experimental results. The sheet resistance (R s) of implanted layers at both temperatures decreased with increases in the annealing temperature between 1200 °C and 1600 °C. Also, in the case of the implanted layer at 500 °C, a low sheet resistance of 71 Ω/□ was obtained by annealing at 1600 °C. Hot-implantation was found to greatly improve the carrier concentration obtained by Hall-effect measurements. In the case of annealing at 1700 °C, the R s of implanted layers at both temperatures increased sharply. From AFM analysis, it is thought that the increase in R s is due to the sublimation or evaporation of SiC from the surface of the implanted layer.
UR - http://www.scopus.com/inward/record.url?scp=17544386024&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=17544386024&partnerID=8YFLogxK
M3 - Chapter
AN - SCOPUS:17544386024
VL - 338
BT - Materials Science Forum
PB - Trans Tech Publ Ltd
ER -