Hot-implantation of phosphorus ions into 4H-SiC

Seiji Imai, Setsuko Kobayashi, Takashi Shinohe, Kenji Fukuda, Yasunori Tanaka, Junji Senzaki, Hisao Tanoue, Naoto Kobayashi, Hideyo Okushi

Research output: Chapter in Book/Report/Conference proceedingChapter

15 Citations (Scopus)

Abstract

Ion implantation of phosphorus (P) into 4H-SiC at room temperature and 500 °C was investigated. The P profiles simulated with a TRIM (transport of ions in matter) program showed good agreement with experimental results. The sheet resistance (R s) of implanted layers at both temperatures decreased with increases in the annealing temperature between 1200 °C and 1600 °C. Also, in the case of the implanted layer at 500 °C, a low sheet resistance of 71 Ω/□ was obtained by annealing at 1600 °C. Hot-implantation was found to greatly improve the carrier concentration obtained by Hall-effect measurements. In the case of annealing at 1700 °C, the R s of implanted layers at both temperatures increased sharply. From AFM analysis, it is thought that the increase in R s is due to the sublimation or evaporation of SiC from the surface of the implanted layer.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

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ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Imai, S., Kobayashi, S., Shinohe, T., Fukuda, K., Tanaka, Y., Senzaki, J., Tanoue, H., Kobayashi, N., & Okushi, H. (2000). Hot-implantation of phosphorus ions into 4H-SiC. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.