Hot-implantation of phosphorus ions into 4H-SiC

Seiji Imai; Setsuko Kobayashi; Takashi Shinohe; Kenji Fukuda; Yasunori Tanaka; Junji Senzaki; Hisao Tanoue; Naoto Kobayashi; Hideyo Okushi

Hot-implantation of phosphorus ions into 4H-SiC

Seiji Imai, Setsuko Kobayashi, Takashi Shinohe, Kenji Fukuda, Yasunori Tanaka, Junji Senzaki, Hisao Tanoue, Naoto Kobayashi, Hideyo Okushi

Research output: Chapter in Book/Report/Conference proceeding › Chapter

17 Citations (Scopus)

Abstract

Ion implantation of phosphorus (P) into 4H-SiC at room temperature and 500 °C was investigated. The P profiles simulated with a TRIM (transport of ions in matter) program showed good agreement with experimental results. The sheet resistance (R _s) of implanted layers at both temperatures decreased with increases in the annealing temperature between 1200 °C and 1600 °C. Also, in the case of the implanted layer at 500 °C, a low sheet resistance of 71 Ω/□ was obtained by annealing at 1600 °C. Hot-implantation was found to greatly improve the carrier concentration obtained by Hall-effect measurements. In the case of annealing at 1700 °C, the R _s of implanted layers at both temperatures increased sharply. From AFM analysis, it is thought that the increase in R _s is due to the sublimation or evaporation of SiC from the surface of the implanted layer.

Original language	English
Title of host publication	Materials Science Forum
Publisher	Trans Tech Publ Ltd
Volume	338
Publication status	Published - 2000
Externally published	Yes
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 1999 Oct 10 → 1999 Oct 15

Other

Other	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials
City	Research Triangle Park, NC, USA
Period	99/10/10 → 99/10/15

ASJC Scopus subject areas

Materials Science(all)

Cite this

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title = "Hot-implantation of phosphorus ions into 4H-SiC",

abstract = "Ion implantation of phosphorus (P) into 4H-SiC at room temperature and 500 °C was investigated. The P profiles simulated with a TRIM (transport of ions in matter) program showed good agreement with experimental results. The sheet resistance (R s) of implanted layers at both temperatures decreased with increases in the annealing temperature between 1200 °C and 1600 °C. Also, in the case of the implanted layer at 500 °C, a low sheet resistance of 71 Ω/□ was obtained by annealing at 1600 °C. Hot-implantation was found to greatly improve the carrier concentration obtained by Hall-effect measurements. In the case of annealing at 1700 °C, the R s of implanted layers at both temperatures increased sharply. From AFM analysis, it is thought that the increase in R s is due to the sublimation or evaporation of SiC from the surface of the implanted layer. ",

author = "Seiji Imai and Setsuko Kobayashi and Takashi Shinohe and Kenji Fukuda and Yasunori Tanaka and Junji Senzaki and Hisao Tanoue and Naoto Kobayashi and Hideyo Okushi",

year = "2000",

language = "English",

volume = "338",

booktitle = "Materials Science Forum",

publisher = "Trans Tech Publ Ltd",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

}

TY - CHAP

T1 - Hot-implantation of phosphorus ions into 4H-SiC

AU - Imai, Seiji

AU - Kobayashi, Setsuko

AU - Shinohe, Takashi

AU - Fukuda, Kenji

AU - Tanaka, Yasunori

AU - Senzaki, Junji

AU - Tanoue, Hisao

AU - Kobayashi, Naoto

AU - Okushi, Hideyo

PY - 2000

Y1 - 2000

N2 - Ion implantation of phosphorus (P) into 4H-SiC at room temperature and 500 °C was investigated. The P profiles simulated with a TRIM (transport of ions in matter) program showed good agreement with experimental results. The sheet resistance (R s) of implanted layers at both temperatures decreased with increases in the annealing temperature between 1200 °C and 1600 °C. Also, in the case of the implanted layer at 500 °C, a low sheet resistance of 71 Ω/□ was obtained by annealing at 1600 °C. Hot-implantation was found to greatly improve the carrier concentration obtained by Hall-effect measurements. In the case of annealing at 1700 °C, the R s of implanted layers at both temperatures increased sharply. From AFM analysis, it is thought that the increase in R s is due to the sublimation or evaporation of SiC from the surface of the implanted layer.

AB - Ion implantation of phosphorus (P) into 4H-SiC at room temperature and 500 °C was investigated. The P profiles simulated with a TRIM (transport of ions in matter) program showed good agreement with experimental results. The sheet resistance (R s) of implanted layers at both temperatures decreased with increases in the annealing temperature between 1200 °C and 1600 °C. Also, in the case of the implanted layer at 500 °C, a low sheet resistance of 71 Ω/□ was obtained by annealing at 1600 °C. Hot-implantation was found to greatly improve the carrier concentration obtained by Hall-effect measurements. In the case of annealing at 1700 °C, the R s of implanted layers at both temperatures increased sharply. From AFM analysis, it is thought that the increase in R s is due to the sublimation or evaporation of SiC from the surface of the implanted layer.

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M3 - Chapter

AN - SCOPUS:17544386024

VL - 338

BT - Materials Science Forum

PB - Trans Tech Publ Ltd

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Hot-implantation of phosphorus ions into 4H-SiC

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