Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration

Masatsugu Nimura; Jun Mizuno; Akitsu Shigetou; Katsuyuki Sakuma; Hiroshi Ogino; Tomoyuki Enomoto; Shuichi Shoji

doi:10.1109/ECTC.2013.6575719

Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration

Masatsugu Nimura, Jun Mizuno, Akitsu Shigetou, Katsuyuki Sakuma, Hiroshi Ogino, Tomoyuki Enomoto, Shuichi Shoji

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

This paper describes the hybrid Au-Au bonding technology in which the Au-Au and adhesive-adhesive bonding are carried out simultaneously using planar adhesive structure for 3D integration. The planar adhesive structure was fabricated by CMP of adhesive, and consists of ultralow-profiled Au bump with flat surface and uncured adhesive. The bonded interface was observed with SAM and SEM. The results indicate that Au bump connection and the adhesive filling of the 6-μm gap between bonded chip and substrate were achieved without significant void. All 900 bumps were also electrically connected. Furthermore, the shear strength of the bonded sample was13 MPa. The adhesive was strongly bonded because the Si substrate of bonded sample was broken to pieces.

Original language	English
Title of host publication	2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Pages	1153-1157
Number of pages	5
DOIs	https://doi.org/10.1109/ECTC.2013.6575719
Publication status	Published - 2013 Sept 9
Event	2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 - Las Vegas, NV, United States Duration: 2013 May 28 → 2013 May 31

Publication series

Name	Proceedings - Electronic Components and Technology Conference
ISSN (Print)	0569-5503

Conference

Conference	2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Country/Territory	United States
City	Las Vegas, NV
Period	13/5/28 → 13/5/31

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ECTC.2013.6575719

Cite this

Nimura, M., Mizuno, J., Shigetou, A., Sakuma, K., Ogino, H., Enomoto, T., & Shoji, S. (2013). Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration. In 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 (pp. 1153-1157). [6575719] (Proceedings - Electronic Components and Technology Conference). https://doi.org/10.1109/ECTC.2013.6575719

Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration. / Nimura, Masatsugu; Mizuno, Jun; Shigetou, Akitsu et al.

2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013. 2013. p. 1153-1157 6575719 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nimura, M, Mizuno, J, Shigetou, A, Sakuma, K, Ogino, H, Enomoto, T & Shoji, S 2013, Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration. in 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013., 6575719, Proceedings - Electronic Components and Technology Conference, pp. 1153-1157, 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013, Las Vegas, NV, United States, 13/5/28. https://doi.org/10.1109/ECTC.2013.6575719

@inproceedings{9786aa29f92746028916cdf2c68925a2,

title = "Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration",

abstract = "This paper describes the hybrid Au-Au bonding technology in which the Au-Au and adhesive-adhesive bonding are carried out simultaneously using planar adhesive structure for 3D integration. The planar adhesive structure was fabricated by CMP of adhesive, and consists of ultralow-profiled Au bump with flat surface and uncured adhesive. The bonded interface was observed with SAM and SEM. The results indicate that Au bump connection and the adhesive filling of the 6-μm gap between bonded chip and substrate were achieved without significant void. All 900 bumps were also electrically connected. Furthermore, the shear strength of the bonded sample was13 MPa. The adhesive was strongly bonded because the Si substrate of bonded sample was broken to pieces.",

author = "Masatsugu Nimura and Jun Mizuno and Akitsu Shigetou and Katsuyuki Sakuma and Hiroshi Ogino and Tomoyuki Enomoto and Shuichi Shoji",

year = "2013",

month = sep,

day = "9",

doi = "10.1109/ECTC.2013.6575719",

language = "English",

isbn = "9781479902330",

series = "Proceedings - Electronic Components and Technology Conference",

pages = "1153--1157",

booktitle = "2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013",

note = "2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 ; Conference date: 28-05-2013 Through 31-05-2013",

}

TY - GEN

T1 - Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration

AU - Nimura, Masatsugu

AU - Mizuno, Jun

AU - Shigetou, Akitsu

AU - Sakuma, Katsuyuki

AU - Ogino, Hiroshi

AU - Enomoto, Tomoyuki

AU - Shoji, Shuichi

PY - 2013/9/9

Y1 - 2013/9/9

N2 - This paper describes the hybrid Au-Au bonding technology in which the Au-Au and adhesive-adhesive bonding are carried out simultaneously using planar adhesive structure for 3D integration. The planar adhesive structure was fabricated by CMP of adhesive, and consists of ultralow-profiled Au bump with flat surface and uncured adhesive. The bonded interface was observed with SAM and SEM. The results indicate that Au bump connection and the adhesive filling of the 6-μm gap between bonded chip and substrate were achieved without significant void. All 900 bumps were also electrically connected. Furthermore, the shear strength of the bonded sample was13 MPa. The adhesive was strongly bonded because the Si substrate of bonded sample was broken to pieces.

AB - This paper describes the hybrid Au-Au bonding technology in which the Au-Au and adhesive-adhesive bonding are carried out simultaneously using planar adhesive structure for 3D integration. The planar adhesive structure was fabricated by CMP of adhesive, and consists of ultralow-profiled Au bump with flat surface and uncured adhesive. The bonded interface was observed with SAM and SEM. The results indicate that Au bump connection and the adhesive filling of the 6-μm gap between bonded chip and substrate were achieved without significant void. All 900 bumps were also electrically connected. Furthermore, the shear strength of the bonded sample was13 MPa. The adhesive was strongly bonded because the Si substrate of bonded sample was broken to pieces.

UR - http://www.scopus.com/inward/record.url?scp=84883317061&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883317061&partnerID=8YFLogxK

U2 - 10.1109/ECTC.2013.6575719

DO - 10.1109/ECTC.2013.6575719

M3 - Conference contribution

AN - SCOPUS:84883317061

SN - 9781479902330

T3 - Proceedings - Electronic Components and Technology Conference

SP - 1153

EP - 1157

BT - 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013

T2 - 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013

Y2 - 28 May 2013 through 31 May 2013

ER -

Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration

Abstract

Publication series

Conference

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this