Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration

Masatsugu Nimura, Jun Mizuno, Akitsu Shigetou, Katsuyuki Sakuma, Hiroshi Ogino, Tomoyuki Enomoto, Shuichi Shoji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

This paper describes the hybrid Au-Au bonding technology in which the Au-Au and adhesive-adhesive bonding are carried out simultaneously using planar adhesive structure for 3D integration. The planar adhesive structure was fabricated by CMP of adhesive, and consists of ultralow-profiled Au bump with flat surface and uncured adhesive. The bonded interface was observed with SAM and SEM. The results indicate that Au bump connection and the adhesive filling of the 6-μm gap between bonded chip and substrate were achieved without significant void. All 900 bumps were also electrically connected. Furthermore, the shear strength of the bonded sample was13 MPa. The adhesive was strongly bonded because the Si substrate of bonded sample was broken to pieces.

Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
Pages1153-1157
Number of pages5
DOIs
Publication statusPublished - 2013
Event2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 - Las Vegas, NV
Duration: 2013 May 282013 May 31

Other

Other2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
CityLas Vegas, NV
Period13/5/2813/5/31

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Nimura, M., Mizuno, J., Shigetou, A., Sakuma, K., Ogino, H., Enomoto, T., & Shoji, S. (2013). Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration. In Proceedings - Electronic Components and Technology Conference (pp. 1153-1157). [6575719] https://doi.org/10.1109/ECTC.2013.6575719