Hybrid bonding of Cu/Sn microbump and adhesive with silica filler for 3D interconnection of single micron pitch

Masaki Ohyama, Masatsugu Nimura, Jun Mizuno, Shuichi Shoji, Mamoru Tamura, Tomoyuki Enomoto, Akitsu Shigetou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

This paper describes hybrid bonding technology of Cu/Sn microbumps and adhesive with silica filler for three-dimensional (3D) interconnection of single-micron pitch. We fabricated bonding structure composed of 8-μm pitch Cu/Sn bumps and uncured adhesive with by using combination process of resin-chemical mechanical polishing (CMP) and O<inf>2</inf>/CHF<inf>3</inf> plasma etching. Adhesive with silica filler is conventionally used for reduction of mechanical stress around microbumps by lowering CTE of underfill. With the bonding structure, the Cu/Sn microbumps and the adhesive were simultaneously bonded in N<inf>2</inf> atmospheric pressure after surface treatment of Ar/H<inf>2</inf> plasma irradiation. Results of scanning electron microscope (SEM) and scanning ion microscope (SIM) analyses show that Sn of microbumps was properly wetted on Cu film without resin and silica filler trapping. The adhesive was also bonded on Cu film in 6-μm gap between chips. The shear strength was 17.85 MPa. Therefore, proposed method is highly effective for hybrid bonding of single-micron pitch aimed at future ultra-high density 3D interconnection.

Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages325-330
Number of pages6
Volume2015-July
ISBN (Print)9781479986095
DOIs
Publication statusPublished - 2015 Jul 15
Event2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States
Duration: 2015 May 262015 May 29

Other

Other2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
CountryUnited States
CitySan Diego
Period15/5/2615/5/29

Fingerprint

Silicon Dioxide
Fillers
Adhesives
Silica
Resins
Ion microscopes
Scanning
Chemical mechanical polishing
Plasma etching
Shear strength
Atmospheric pressure
Surface treatment
Electron microscopes
Irradiation
Plasmas

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ohyama, M., Nimura, M., Mizuno, J., Shoji, S., Tamura, M., Enomoto, T., & Shigetou, A. (2015). Hybrid bonding of Cu/Sn microbump and adhesive with silica filler for 3D interconnection of single micron pitch. In Proceedings - Electronic Components and Technology Conference (Vol. 2015-July, pp. 325-330). [7159612] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2015.7159612

Hybrid bonding of Cu/Sn microbump and adhesive with silica filler for 3D interconnection of single micron pitch. / Ohyama, Masaki; Nimura, Masatsugu; Mizuno, Jun; Shoji, Shuichi; Tamura, Mamoru; Enomoto, Tomoyuki; Shigetou, Akitsu.

Proceedings - Electronic Components and Technology Conference. Vol. 2015-July Institute of Electrical and Electronics Engineers Inc., 2015. p. 325-330 7159612.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ohyama, M, Nimura, M, Mizuno, J, Shoji, S, Tamura, M, Enomoto, T & Shigetou, A 2015, Hybrid bonding of Cu/Sn microbump and adhesive with silica filler for 3D interconnection of single micron pitch. in Proceedings - Electronic Components and Technology Conference. vol. 2015-July, 7159612, Institute of Electrical and Electronics Engineers Inc., pp. 325-330, 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015, San Diego, United States, 15/5/26. https://doi.org/10.1109/ECTC.2015.7159612
Ohyama M, Nimura M, Mizuno J, Shoji S, Tamura M, Enomoto T et al. Hybrid bonding of Cu/Sn microbump and adhesive with silica filler for 3D interconnection of single micron pitch. In Proceedings - Electronic Components and Technology Conference. Vol. 2015-July. Institute of Electrical and Electronics Engineers Inc. 2015. p. 325-330. 7159612 https://doi.org/10.1109/ECTC.2015.7159612
Ohyama, Masaki ; Nimura, Masatsugu ; Mizuno, Jun ; Shoji, Shuichi ; Tamura, Mamoru ; Enomoto, Tomoyuki ; Shigetou, Akitsu. / Hybrid bonding of Cu/Sn microbump and adhesive with silica filler for 3D interconnection of single micron pitch. Proceedings - Electronic Components and Technology Conference. Vol. 2015-July Institute of Electrical and Electronics Engineers Inc., 2015. pp. 325-330
@inproceedings{b48f877d68ac4d1fa17530405721f5c9,
title = "Hybrid bonding of Cu/Sn microbump and adhesive with silica filler for 3D interconnection of single micron pitch",
abstract = "This paper describes hybrid bonding technology of Cu/Sn microbumps and adhesive with silica filler for three-dimensional (3D) interconnection of single-micron pitch. We fabricated bonding structure composed of 8-μm pitch Cu/Sn bumps and uncured adhesive with by using combination process of resin-chemical mechanical polishing (CMP) and O2/CHF3 plasma etching. Adhesive with silica filler is conventionally used for reduction of mechanical stress around microbumps by lowering CTE of underfill. With the bonding structure, the Cu/Sn microbumps and the adhesive were simultaneously bonded in N2 atmospheric pressure after surface treatment of Ar/H2 plasma irradiation. Results of scanning electron microscope (SEM) and scanning ion microscope (SIM) analyses show that Sn of microbumps was properly wetted on Cu film without resin and silica filler trapping. The adhesive was also bonded on Cu film in 6-μm gap between chips. The shear strength was 17.85 MPa. Therefore, proposed method is highly effective for hybrid bonding of single-micron pitch aimed at future ultra-high density 3D interconnection.",
author = "Masaki Ohyama and Masatsugu Nimura and Jun Mizuno and Shuichi Shoji and Mamoru Tamura and Tomoyuki Enomoto and Akitsu Shigetou",
year = "2015",
month = "7",
day = "15",
doi = "10.1109/ECTC.2015.7159612",
language = "English",
isbn = "9781479986095",
volume = "2015-July",
pages = "325--330",
booktitle = "Proceedings - Electronic Components and Technology Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Hybrid bonding of Cu/Sn microbump and adhesive with silica filler for 3D interconnection of single micron pitch

AU - Ohyama, Masaki

AU - Nimura, Masatsugu

AU - Mizuno, Jun

AU - Shoji, Shuichi

AU - Tamura, Mamoru

AU - Enomoto, Tomoyuki

AU - Shigetou, Akitsu

PY - 2015/7/15

Y1 - 2015/7/15

N2 - This paper describes hybrid bonding technology of Cu/Sn microbumps and adhesive with silica filler for three-dimensional (3D) interconnection of single-micron pitch. We fabricated bonding structure composed of 8-μm pitch Cu/Sn bumps and uncured adhesive with by using combination process of resin-chemical mechanical polishing (CMP) and O2/CHF3 plasma etching. Adhesive with silica filler is conventionally used for reduction of mechanical stress around microbumps by lowering CTE of underfill. With the bonding structure, the Cu/Sn microbumps and the adhesive were simultaneously bonded in N2 atmospheric pressure after surface treatment of Ar/H2 plasma irradiation. Results of scanning electron microscope (SEM) and scanning ion microscope (SIM) analyses show that Sn of microbumps was properly wetted on Cu film without resin and silica filler trapping. The adhesive was also bonded on Cu film in 6-μm gap between chips. The shear strength was 17.85 MPa. Therefore, proposed method is highly effective for hybrid bonding of single-micron pitch aimed at future ultra-high density 3D interconnection.

AB - This paper describes hybrid bonding technology of Cu/Sn microbumps and adhesive with silica filler for three-dimensional (3D) interconnection of single-micron pitch. We fabricated bonding structure composed of 8-μm pitch Cu/Sn bumps and uncured adhesive with by using combination process of resin-chemical mechanical polishing (CMP) and O2/CHF3 plasma etching. Adhesive with silica filler is conventionally used for reduction of mechanical stress around microbumps by lowering CTE of underfill. With the bonding structure, the Cu/Sn microbumps and the adhesive were simultaneously bonded in N2 atmospheric pressure after surface treatment of Ar/H2 plasma irradiation. Results of scanning electron microscope (SEM) and scanning ion microscope (SIM) analyses show that Sn of microbumps was properly wetted on Cu film without resin and silica filler trapping. The adhesive was also bonded on Cu film in 6-μm gap between chips. The shear strength was 17.85 MPa. Therefore, proposed method is highly effective for hybrid bonding of single-micron pitch aimed at future ultra-high density 3D interconnection.

UR - http://www.scopus.com/inward/record.url?scp=84942123115&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942123115&partnerID=8YFLogxK

U2 - 10.1109/ECTC.2015.7159612

DO - 10.1109/ECTC.2015.7159612

M3 - Conference contribution

SN - 9781479986095

VL - 2015-July

SP - 325

EP - 330

BT - Proceedings - Electronic Components and Technology Conference

PB - Institute of Electrical and Electronics Engineers Inc.

ER -