HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs.

Y. Kushiro, Y. Noda, Yuichi Matsushima, S. Akiba

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Hydride VPE growth of InP-based alloys for optoelectronic devices is reported. The growth system consists of a double-chamber reactor, an isolated waiting chamber and a magnetic sample-loader. The reduction of impurities and defects in the growth layer has been realized with this apparatus. The VPE-grown InGaAs/InGaAsP/InP heterostructure APD has shown the receiver sensitivity higher than that of a Ge APD by 2-7 db. InGaAs/InP MQW-lasers were also prepared and room-temperature pulsed operation has been achieved.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
EditorsB. de Cremoux
Pages157-162
Number of pages6
Edition74
Publication statusPublished - 1985
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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