HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs.

Y. Kushiro, Y. Noda, Yuichi Matsushima, S. Akiba

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Hydride VPE growth of InP-based alloys for optoelectronic devices is reported. The growth system consists of a double-chamber reactor, an isolated waiting chamber and a magnetic sample-loader. The reduction of impurities and defects in the growth layer has been realized with this apparatus. The VPE-grown InGaAs/InGaAsP/InP heterostructure APD has shown the receiver sensitivity higher than that of a Ge APD by 2-7 db. InGaAs/InP MQW-lasers were also prepared and room-temperature pulsed operation has been achieved.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
EditorsB. de Cremoux
Pages157-162
Number of pages6
Edition74
Publication statusPublished - 1985
Externally publishedYes

Fingerprint

Vapor phase epitaxy
Hydrides
Loaders
Optoelectronic devices
Heterojunctions
Impurities
Defects
Lasers
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kushiro, Y., Noda, Y., Matsushima, Y., & Akiba, S. (1985). HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs. In B. de Cremoux (Ed.), Institute of Physics Conference Series (74 ed., pp. 157-162)

HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs. / Kushiro, Y.; Noda, Y.; Matsushima, Yuichi; Akiba, S.

Institute of Physics Conference Series. ed. / B. de Cremoux. 74. ed. 1985. p. 157-162.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kushiro, Y, Noda, Y, Matsushima, Y & Akiba, S 1985, HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs. in B de Cremoux (ed.), Institute of Physics Conference Series. 74 edn, pp. 157-162.
Kushiro Y, Noda Y, Matsushima Y, Akiba S. HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs. In de Cremoux B, editor, Institute of Physics Conference Series. 74 ed. 1985. p. 157-162
Kushiro, Y. ; Noda, Y. ; Matsushima, Yuichi ; Akiba, S. / HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs. Institute of Physics Conference Series. editor / B. de Cremoux. 74. ed. 1985. pp. 157-162
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