Hydrofluoric acid etching of ultra thin silicon oxide film fabricated by high purity ozone

Ken Nakamura, Akira Kurokawa, Shingo Ichimura

Research output: Contribution to journalArticle

16 Citations (Scopus)


Hydrofluoric acid etching indicates that ultra thin silicon dioxide film made by high purity ozone on Si(100) 2×1 between 300 and 700°C has the same film density as that of thermally grown silicon dioxide for device use on Si(100) at 750°C in a wet environment. Rate of oxide film growth > 6 Å on Si(100) 2 × 1 by ozone is, however, much lower at the substrate temperature between 300 and 500̊C than at 700̊C. This is indicating different kinetics and mechanism of oxide film growth > 6 Å by high purity ozone.

Original languageEnglish
Pages (from-to)361-364
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1999 Jan 1



  • Etching
  • Oxidation
  • Ozone
  • Silicon
  • Silicon oxide
  • XPS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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