Hydrogen effect on solid phase epitaxy of Si on Si (0 0 1) surface

Masataka Hasegawa, Yasunori Tanaka, Naoto Kobayashi

Research output: Contribution to journalArticle

Abstract

Solid phase epitaxy (SPE) of amorphous Si layers of several tens of monolayers on hydrogen-adsorbed Si (0 0 1) substrates was studied in situ by low-energy time-of-flight (TOF) Rutherford Backscattering (RBS)-channeling spectrometry using 25 keV hydrogen ions, and by reflection high energy electron diffraction (RHEED). The SPE has not occurred at all for heating to 600°C even in the case of less than 1 ML adsorption of hydrogen on the Si (0 0 1) surface. Although the SPE has occurred for heating to 700°C, polycrystalline, or {1 1 1} faceted surface were formed. We did not obtain pronounced differences between the effects of the hydrogen adsorption of more or of less than 1 ML on the SPE of Si on Si (0 0 1). In the case of high density hydrogen-containing amorphous Si on a Si (0 0 1) clean surface the SPE has occurred at 600°C, and a {1 1 1} faceted surface was observed. Hydrogen adsorption obstructs the SPE of Si on Si (0 0 1) even if the coverage is less than 1 ML. The rise of the SPE temperature of amorphous Si on a hydrogen-adsorbed Si (0 0 1) surface is attributed to the hydrogen adsorption on the surface.

Original languageEnglish
Pages (from-to)209-213
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume136-138
Publication statusPublished - 1998 Mar
Externally publishedYes

Fingerprint

Epitaxial growth
epitaxy
solid phases
Hydrogen
hydrogen
Adsorption
adsorption
Heating
Reflection high energy electron diffraction
heating
Rutherford backscattering spectroscopy
hydrogen ions
high energy electrons
Spectrometry
Protons
Monolayers
backscattering
electron diffraction
Substrates
Ions

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Hydrogen effect on solid phase epitaxy of Si on Si (0 0 1) surface. / Hasegawa, Masataka; Tanaka, Yasunori; Kobayashi, Naoto.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 136-138, 03.1998, p. 209-213.

Research output: Contribution to journalArticle

@article{95e92461d8784aa4a96034bfc2c4f6a9,
title = "Hydrogen effect on solid phase epitaxy of Si on Si (0 0 1) surface",
abstract = "Solid phase epitaxy (SPE) of amorphous Si layers of several tens of monolayers on hydrogen-adsorbed Si (0 0 1) substrates was studied in situ by low-energy time-of-flight (TOF) Rutherford Backscattering (RBS)-channeling spectrometry using 25 keV hydrogen ions, and by reflection high energy electron diffraction (RHEED). The SPE has not occurred at all for heating to 600°C even in the case of less than 1 ML adsorption of hydrogen on the Si (0 0 1) surface. Although the SPE has occurred for heating to 700°C, polycrystalline, or {1 1 1} faceted surface were formed. We did not obtain pronounced differences between the effects of the hydrogen adsorption of more or of less than 1 ML on the SPE of Si on Si (0 0 1). In the case of high density hydrogen-containing amorphous Si on a Si (0 0 1) clean surface the SPE has occurred at 600°C, and a {1 1 1} faceted surface was observed. Hydrogen adsorption obstructs the SPE of Si on Si (0 0 1) even if the coverage is less than 1 ML. The rise of the SPE temperature of amorphous Si on a hydrogen-adsorbed Si (0 0 1) surface is attributed to the hydrogen adsorption on the surface.",
author = "Masataka Hasegawa and Yasunori Tanaka and Naoto Kobayashi",
year = "1998",
month = "3",
language = "English",
volume = "136-138",
pages = "209--213",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",

}

TY - JOUR

T1 - Hydrogen effect on solid phase epitaxy of Si on Si (0 0 1) surface

AU - Hasegawa, Masataka

AU - Tanaka, Yasunori

AU - Kobayashi, Naoto

PY - 1998/3

Y1 - 1998/3

N2 - Solid phase epitaxy (SPE) of amorphous Si layers of several tens of monolayers on hydrogen-adsorbed Si (0 0 1) substrates was studied in situ by low-energy time-of-flight (TOF) Rutherford Backscattering (RBS)-channeling spectrometry using 25 keV hydrogen ions, and by reflection high energy electron diffraction (RHEED). The SPE has not occurred at all for heating to 600°C even in the case of less than 1 ML adsorption of hydrogen on the Si (0 0 1) surface. Although the SPE has occurred for heating to 700°C, polycrystalline, or {1 1 1} faceted surface were formed. We did not obtain pronounced differences between the effects of the hydrogen adsorption of more or of less than 1 ML on the SPE of Si on Si (0 0 1). In the case of high density hydrogen-containing amorphous Si on a Si (0 0 1) clean surface the SPE has occurred at 600°C, and a {1 1 1} faceted surface was observed. Hydrogen adsorption obstructs the SPE of Si on Si (0 0 1) even if the coverage is less than 1 ML. The rise of the SPE temperature of amorphous Si on a hydrogen-adsorbed Si (0 0 1) surface is attributed to the hydrogen adsorption on the surface.

AB - Solid phase epitaxy (SPE) of amorphous Si layers of several tens of monolayers on hydrogen-adsorbed Si (0 0 1) substrates was studied in situ by low-energy time-of-flight (TOF) Rutherford Backscattering (RBS)-channeling spectrometry using 25 keV hydrogen ions, and by reflection high energy electron diffraction (RHEED). The SPE has not occurred at all for heating to 600°C even in the case of less than 1 ML adsorption of hydrogen on the Si (0 0 1) surface. Although the SPE has occurred for heating to 700°C, polycrystalline, or {1 1 1} faceted surface were formed. We did not obtain pronounced differences between the effects of the hydrogen adsorption of more or of less than 1 ML on the SPE of Si on Si (0 0 1). In the case of high density hydrogen-containing amorphous Si on a Si (0 0 1) clean surface the SPE has occurred at 600°C, and a {1 1 1} faceted surface was observed. Hydrogen adsorption obstructs the SPE of Si on Si (0 0 1) even if the coverage is less than 1 ML. The rise of the SPE temperature of amorphous Si on a hydrogen-adsorbed Si (0 0 1) surface is attributed to the hydrogen adsorption on the surface.

UR - http://www.scopus.com/inward/record.url?scp=0032021061&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032021061&partnerID=8YFLogxK

M3 - Article

VL - 136-138

SP - 209

EP - 213

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -