Hydrogen passivation and ozone oxidation of silicon surface

Akira Kurokawa, Ken Nakamura, Shingo Ichimura

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

The oxidation of H/Si(100) and H/Si(111) with high concentration ozone gas was investigated with X-ray photoelectron spectroscopy(XPS). The ozone oxidation of partially hydride-covered surface was observed. The hydrogen termination reduced the rate of oxygen insertion into silicon backbond. The reduction of oxygen insertion rate by the H-termination for H/Si(100) was larger than that for H/Si(111). The dissociation rate of ozone molecule on H/Si was estimated to be ≈0.2 with a directional mass analyzer.

Original languageEnglish
Pages (from-to)37-42
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume513
Publication statusPublished - 1998 Jan 1
Externally publishedYes
EventProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1998 Apr 131998 Apr 17

Fingerprint

Ozone
Silicon
Passivation
passivity
ozone
Hydrogen
Oxidation
oxidation
insertion
silicon
hydrogen
Oxygen
oxygen
Hydrides
hydrides
analyzers
X ray photoelectron spectroscopy
Gases
photoelectron spectroscopy
dissociation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Hydrogen passivation and ozone oxidation of silicon surface. / Kurokawa, Akira; Nakamura, Ken; Ichimura, Shingo.

In: Materials Research Society Symposium - Proceedings, Vol. 513, 01.01.1998, p. 37-42.

Research output: Contribution to journalConference article

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