Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

Masafumi Inaba, Tsubasa Muta, Mikinori Kobayashi, Toshiki Saito, Masanobu Shibata, Daisuke Matsumura, Takuya Kudo, Atsushi Hiraiwa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    16 Citations (Scopus)

    Abstract

    The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

    Original languageEnglish
    Article number033503
    JournalApplied Physics Letters
    Volume109
    Issue number3
    DOIs
    Publication statusPublished - 2016 Jul 18

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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  • Cite this

    Inaba, M., Muta, T., Kobayashi, M., Saito, T., Shibata, M., Matsumura, D., Kudo, T., Hiraiwa, A., & Kawarada, H. (2016). Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate. Applied Physics Letters, 109(3), [033503]. https://doi.org/10.1063/1.4958889