Identification of extremely radiative nature of AlN by time-resolved photoluminescence

T. Onuma, K. Hazu, A. Uedono, Takayuki Sota, S. F. Chichibu

    Research output: Contribution to journalArticle

    25 Citations (Scopus)

    Abstract

    Extremely radiative nature of high-quality AlN single crystalline epilayers was identified by means of far ultraviolet time-resolved photoluminescence using a frequency-quadrupled femtosecond Al2 O3:Ti laser. The gross radiative lifetimes of a free excitonic polariton emission as short as 10 ps at 7 K and 180 ps at 300 K were revealed, which are the shortest ever reported for bulk semiconductor materials.

    Original languageEnglish
    Article number061906
    JournalApplied Physics Letters
    Volume96
    Issue number6
    DOIs
    Publication statusPublished - 2010

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    radiative lifetime
    polaritons
    photoluminescence
    lasers

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Identification of extremely radiative nature of AlN by time-resolved photoluminescence. / Onuma, T.; Hazu, K.; Uedono, A.; Sota, Takayuki; Chichibu, S. F.

    In: Applied Physics Letters, Vol. 96, No. 6, 061906, 2010.

    Research output: Contribution to journalArticle

    Onuma, T. ; Hazu, K. ; Uedono, A. ; Sota, Takayuki ; Chichibu, S. F. / Identification of extremely radiative nature of AlN by time-resolved photoluminescence. In: Applied Physics Letters. 2010 ; Vol. 96, No. 6.
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